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Electrical conductivity enhancement of epitaxially grown TiN thin films

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Abstract

Titanium nitride (TiN) presents superior electrical conductivity with mechanical and chemical stability and compatibility with the semiconductor fabrication process. Here, we fabricated epitaxial and polycrystalline TiN (111) thin films on MgO (111), sapphire (001), and mica substrates at 640℃ and room temperature by using a DC sputtering, respectively. The epitaxial films show less amount of surface oxidation than the polycrystalline ones grown at room temperature. The epitaxial films show drastically reduced resistivity (~ 30 micro-ohm-cm), much smaller than the polycrystalline films. Temperature-dependent resistivity measurements show a nearly monotonic temperature slope down to low temperature. These results demonstrate that high-temperature growth of TiN thin films leads to significant enhancement of electrical conductivity, promising for durable and scalable electrode applications.

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References

  1. L.P.B. Lima, M.A. Moreira, J.A. Diniz, I. Doi, Titanium nitride as promising gate electrode for MOS technology. Phys. Status Solidi C 9, 1427–1430 (2012)

    Article  ADS  Google Scholar 

  2. S.J. Kim et al., Flat-surface-assisted and self-regulated oxidation resistance of Cu(111). Nature 603, 434–438 (2022)

    Article  ADS  Google Scholar 

  3. M. Jung, V. Gaddam, S. Jeon, A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology. Nano Converg. 9, 44 (2022)

    Article  Google Scholar 

  4. C. Tian, L. Wei, Y. Li, J. Jiang, Recent progress on two-dimensional neuromorphic devices and artificial neural network. Curr. Appl. Phys. 31, 182–198 (2021)

    Article  ADS  Google Scholar 

  5. J. Peng et al., Centimetre-scale perovskite solar cells with fill factors of more than 86 per cent. Nature 601, 573–578 (2022)

    Article  ADS  Google Scholar 

  6. S. Wang, A. Lu, C.-J. Zhong, Hydrogen production from water electrolysis: role of catalysts. Nano Converg. 8, 4 (2021)

    Article  Google Scholar 

  7. J.E. Yoo et al., MAX-Phase Films Overcome Scaling Limitations to the Resistivity of Metal Thin Films. ACS Appl. Mater. Interfaces 13, 61809–61817 (2021)

    Article  Google Scholar 

  8. J. Kim, J.-K. Lee, B. Chae, J. Ahn, S. Lee, Near-field infrared nanoscopic study of EUV- and e-beam-exposed hydrogen silsesquioxane photoresist. Nano Converg. 9, 53 (2022)

    Article  Google Scholar 

  9. J.M. Blackburn, D.P. Long, A. Cabañas, J.J. Watkins, Deposition of Conformal Copper and Nickel Films from Supercritical Carbon Dioxide. Science 294, 141–145 (2001)

    Article  ADS  Google Scholar 

  10. I.H. Ho et al., Ultrathin TiN epitaxial films as transparent conductive electrodes. ACS Appl. Mater. Interfaces 14, 16839–16845 (2022)

    Article  Google Scholar 

  11. Rai, S., Prajapati, A. K. & Yadawa, P. K. Effect of temperature on elastic, mechanical and thermophysical properties of VNx (0.76 ≤ x ≤ 1.00) epitaxial layers. J. Korean Phys. Soc. (2022) https://doi.org/10.1007/s40042-022-00643-3.

  12. R. Yan et al., GaN/NbN epitaxial semiconductor/superconductor heterostructures. Nature 555, 183–189 (2018)

    Article  ADS  Google Scholar 

  13. K.J. Lee et al., Structural properties of ferroelectric heterostructures using coherent bragg rod analysis. Curr. Appl. Phys. 20, 505–509 (2020)

    Article  ADS  Google Scholar 

  14. Y.M. Kwak et al., Magnetoresistance of epitaxial SrRuO3 thin films on a flexible CoFe2O4-buffered mica substrate. Curr. Appl. Phys. 34, 71–75 (2022)

    Article  ADS  Google Scholar 

  15. Li, J. et al. Effect of annealing temperature on resistive switching behavior of Al/ La0.7Sr0.3MnO3 /LaNiO3 devices. Curr. Appl. Phys. (2022) https://doi.org/10.1016/j.cap.2022.11.013.

  16. H.J. Kim et al., Chemical and structural analysis of low-temperature excimer-laser annealing in indium-tin oxide sol-gel films. Curr. Appl. Phys. 19, 168–173 (2019)

    Article  ADS  Google Scholar 

  17. B. Sohn, C. Kim, Evolution of electronic band reconstruction in thickness-controlled perovskite SrRuO$$_3$$thin films. J. Korean Phys. Soc. (2022). https://doi.org/10.1007/s40042-022-00633-5

    Article  Google Scholar 

  18. N.H. Lam et al., Controlling Spin-Orbit Coupling to Tailor Type-II Dirac Bands. ACS Nano 16, 11227–11233 (2022)

    Article  Google Scholar 

  19. G. Duvjir et al., Emergence of a metal-insulator transition and high-temperature charge-density waves in VSe2 at the monolayer limit. Nano Lett. 18, 5432–5438 (2018)

    Article  ADS  Google Scholar 

  20. G. Duvjir et al., Fine structure of the charge density wave in bulk VTe2. APL Mater. 10, 111102 (2022)

    Article  ADS  Google Scholar 

  21. P. Ranjan et al., 2D materials: increscent quantum flatland with immense potential for applications. Nano Converg. 9, 26 (2022)

    Article  Google Scholar 

  22. A. Iqbal, J. Hong, T.Y. Ko, C.M. Koo, Improving oxidation stability of 2D MXenes: synthesis, storage media, and conditions. Nano Converg. 8, 9 (2021)

    Article  Google Scholar 

  23. W.-P. Guo et al., Titanium nitride epitaxial films as a plasmonic material platform: alternative to gold. ACS Photonics 6, 1848–1854 (2019)

    Article  Google Scholar 

  24. R. Zhang et al., Wafer-scale epitaxy of flexible nitride films with superior plasmonic and superconducting performance. ACS Appl. Mater. Interfaces 13, 60182–60191 (2021)

    Article  Google Scholar 

  25. M. Lou, L. Wang, L. Chen, K. Xu, K. Chang, Role of refractory metal elements addition on the early oxidation behavior of TiN coatings. Mater. Lett. 331, 133406 (2023)

    Article  Google Scholar 

  26. A. Calzolari, A. Catellani, Controlling the TiN electrode work function at the atomistic level: a first principles investigation. IEEE Access 8, 156308–156313 (2020)

    Article  Google Scholar 

  27. A. Torgovkin et al., High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition. Supercond. Sci. Technol. 31, 055017 (2018)

    Article  ADS  Google Scholar 

  28. Y.W. Jung et al., Study on TiN film growth mechanism using spectroscopic ellipsometry. J. Korean Phys. Soc. 80, 185–189 (2022)

    Article  ADS  Google Scholar 

  29. J. Seo, S.W. Cho, H.-W. Ahn, B. Cheong, S. Lee, A study on the interface between an amorphous chalcogenide and the electrode: Effect of the electrode on the characteristics of the Ovonic Threshold Switch (OTS). J. Alloys Compd. 691, 880–883 (2017)

    Article  Google Scholar 

  30. J.-W. Lim, K. Mimura, M. Isshiki, Thickness dependence of resistivity for Cu films deposited by ion beam deposition. Appl. Surf. Sci. 217, 95–99 (2003)

    Article  ADS  Google Scholar 

  31. J. Hämäläinen et al., Atomic layer deposition of iridium thin films by consecutive oxidation and reduction steps. Chem. Mater. 21, 4868–4872 (2009)

    Article  Google Scholar 

  32. Choi, D. et al. Phase, grain structure, stress, and resistivity of sputter-deposited tungsten films. J. Vac. Sci. Technol. Vac. Surf. Films 29, 051512 (2011).

  33. A.K. Pal, S. Chaudhuri, A.K. Barua, The electrical resistivity and temperature coefficient of resistivity of cobalt films. J. Phys. Appl. Phys. 9, 2261–2267 (1976)

    Article  ADS  Google Scholar 

  34. J. Musschoot et al., Atomic layer deposition of titanium nitride from TDMAT precursor. Microelectron. Eng. 86, 72–77 (2009)

    Article  Google Scholar 

  35. C. Sun et al., Control the switching mode of Pt/HfO2/TiN RRAM devices by tuning the crystalline state of TiN electrode. J. Alloys Compd. 749, 481–486 (2018)

    Article  Google Scholar 

  36. Y.S. Kim, H. Chung, S. Kwon, J. Kim, W. Jo, Grain boundary passivation via balancing feedback of hole barrier modulation in HfO2-x for nanoscale flexible electronics. Nano Converg. 9, 43 (2022)

    Article  Google Scholar 

  37. Kim, T., Kim, Y., Lee, I., Lee, D. & Sohn, H. Ovonic threshold switching in polycrystalline zinc telluride thin films deposited by RF sputtering. Nanotechnology 30, 13LT01 (2019).

  38. M. Jay Kim et al., Epitaxial growth and optical band gap variation of ultrathin ZnTe films. Mater. Lett. 313, 131725 (2022)

    Article  Google Scholar 

  39. R.S. Pedanekar, S.K. Shaikh, K.Y. Rajpure, Thin film photocatalysis for environmental remediation: a status review. Curr. Appl. Phys. 20, 931–952 (2020)

    Article  ADS  Google Scholar 

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Acknowledgements

This research has been supported by the Ministry of Trade, Industry and Energy and the KSRC (20010569), NRF (2020R1A2C200373211, 2020R1C1C1012424), MOLIT as [Innovative Talent Education Program for Smart City]. This work was supported by the 2020 Research Fund of the University of Seoul for M.Han.

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Correspondence to Moonsup Han or Young Jun Chang.

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Khim, Y.G., Park, B., Heo, J.E. et al. Electrical conductivity enhancement of epitaxially grown TiN thin films. J. Korean Phys. Soc. 82, 486–490 (2023). https://doi.org/10.1007/s40042-023-00729-6

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