Abstract
Titanium nitride (TiN) presents superior electrical conductivity with mechanical and chemical stability and compatibility with the semiconductor fabrication process. Here, we fabricated epitaxial and polycrystalline TiN (111) thin films on MgO (111), sapphire (001), and mica substrates at 640℃ and room temperature by using a DC sputtering, respectively. The epitaxial films show less amount of surface oxidation than the polycrystalline ones grown at room temperature. The epitaxial films show drastically reduced resistivity (~ 30 micro-ohm-cm), much smaller than the polycrystalline films. Temperature-dependent resistivity measurements show a nearly monotonic temperature slope down to low temperature. These results demonstrate that high-temperature growth of TiN thin films leads to significant enhancement of electrical conductivity, promising for durable and scalable electrode applications.
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Acknowledgements
This research has been supported by the Ministry of Trade, Industry and Energy and the KSRC (20010569), NRF (2020R1A2C200373211, 2020R1C1C1012424), MOLIT as [Innovative Talent Education Program for Smart City]. This work was supported by the 2020 Research Fund of the University of Seoul for M.Han.
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Khim, Y.G., Park, B., Heo, J.E. et al. Electrical conductivity enhancement of epitaxially grown TiN thin films. J. Korean Phys. Soc. 82, 486–490 (2023). https://doi.org/10.1007/s40042-023-00729-6
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DOI: https://doi.org/10.1007/s40042-023-00729-6