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Study of a large-area graphene transistor on a CaF2 substrate using a full-coverage polymer film as an additional dielectric

  • Original Paper - Condensed Matter
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Abstract

We report the electrical transport properties of a dual-gate graphene device placed on a CaF2 substrate. A hexagonal boron nitride top-gate dielectric was introduced to confirm the electrical characteristics of the CaF2/graphene transistor because it is difficult to inject sufficient carriers through the CaF2 substrate owing to its thickness of 500 µm, and the typical ambipolar behavior of graphene with a slight n-doping effect was clearly observed. In addition, we used a polymethyl methacrylate (PMMA) film as a top-gate dielectric for large-scale graphene devices grown via chemical vapor deposition, which was transferred onto a CaF2 substrate. We controlled the high gate leakage current caused by the breakdown of the polymer due to non-uniformity by applying the film-transfer process rather than the direct coating method on the graphene device. Furthermore, the transport properties of large-area graphene in contact with CaF2 are discussed with respect to the effect of top-contacted PMMA.

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Acknowledgements

This study was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF-2021R1A2C2013289, NRF-2020R1I1A1A01074120) and by a Basic Science Institute (National Research Facilities and Equipment Center) grant (No. 2021R1A6C101A429) funded by the Ministry of Education. This study was also supported by the 2021 BK21 FOUR Program of the Pusan National University.

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  1. Yoojoo Yun and Jinseok Oh have contributed equally to this work.

Authors and Affiliations

  1. Department of Physics, Pusan National University, Busan, 46241, Korea

    Yoojoo Yun, Jinseok Oh, Yoonhyuck Yi, Hyunkyung Lee, Byeongwan Kim & Haeyong Kang

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  1. Yoojoo Yun
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  2. Jinseok Oh
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  3. Yoonhyuck Yi
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  4. Hyunkyung Lee
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Correspondence to Haeyong Kang.

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Yun, Y., Oh, J., Yi, Y. et al. Study of a large-area graphene transistor on a CaF2 substrate using a full-coverage polymer film as an additional dielectric. J. Korean Phys. Soc. 81, 942–947 (2022). https://doi.org/10.1007/s40042-022-00610-y

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