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Strain-effect transistor with Y-shaped graphene junctions

  • Original Paper - Condensed Matter
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Abstract

Many theoretical suggestions and novel outlooks have been articulated in investigations into the pseudo-magnetic fields (PMFs) that arise in strained graphene. Application of triaxial strain to graphene is perhaps the most representative approach to strain engineering of graphene, with its emergent uniform PMFs. Here, we conduct quantum transport calculations and demonstrate that a Y-shaped graphene junction exhibits a current switching effect by means of strain control. We report that both electrical and thermoelectric currents are modulated by controlling the elastic strain in the junction region, exhibiting a noticeable level of current on/off ratio. The strain-tunability of the current switching is revealed to be more efficient for larger chemical potentials due to the opening of pseudo-magnetic Landau levels in our device. Strain-induced modulation of graphene’s electronic and thermoelectric properties with the emergent PMFs has the potential to benefit graphene-based nanoelectronic device applications.

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Acknowledgements

The author thanks Dr. Hee Chul Park for the fruitful discussion, and Ms. Seunghyun Jeon for the assistance and technical support in computational tasks. The author also appreciates Mr. Rasmussen for the thorough consultation on English of the manuscript. This work is funded by Chosun University (2020).

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  1. Department of Physics Education, Chosun University, Gwangju, 61452, Republic of Korea

    Nojoon Myoung

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  1. Nojoon Myoung
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Correspondence to Nojoon Myoung.

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Myoung, N. Strain-effect transistor with Y-shaped graphene junctions. J. Korean Phys. Soc. 80, 490–495 (2022). https://doi.org/10.1007/s40042-022-00451-9

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  • DOI: https://doi.org/10.1007/s40042-022-00451-9

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