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Low-temperature processed nickel oxide hole-transporting layer for perovskite solar cell

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Abstract

In this study, we demonstrated low-temperature sol–gel processed nickel oxide (NiO) film as the hole transporting layer (HTL) of the CH3NH3PbI3 (MAPbI3) perovskite solar cells. The NiO film, which was solution-processed and annealed at a temperature of 300 °C showed rms surface roughness of 2.86 nm, optical transmittance of ~ 82 to 87% in the visible wavelength, and the band gap energy of 3.82 eV. The perovskite coated on the NiO showed a good surface coverage with negligible pinholes, a typical grain size of 100–300 nm, photoluminescence peak of 767 nm, and the Urbach energy of 60 meV. The perovskite solar cells fabricated with NiO HTL produced the power conversation efficiency (PCE) of 8.13%, short circuit current density (Jsc) of 14.78 mA/cm2, open circuit voltage (Voc) of 1.05 V, and filling factor (FF) of 52.4%. This indicates that, although the device performance should be further developed by optimizing the NiO, the low-temperature processed NiO has a substantial potential as the HTL of the perovskite solar cells.

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Acknowledgements

This research was supported by “Research Base Construction Fund Support Program” funded by Jeonbuk National University in 2020.

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  1. Arjun Singh

    Present address: Department of Applied Sciences, The Northcap University, Gurugram, 122017, India

Authors and Affiliations

  1. Department of Semiconductor Science and TechnologySemiconductor Physics Research Center, Jeonbuk National University, Jeonju, 54896, South Korea

    Arjun Singh, Bhaskar Parida, Munsik Oh, Seonghoon Jeong & Hyunsoo Kim

  2. School of Chemical Engineering, Yeungnam University, Gyeongsan, 38541, South Korea

    Kwang-Soon Ahn

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  1. Arjun Singh
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Singh, A., Parida, B., Oh, M. et al. Low-temperature processed nickel oxide hole-transporting layer for perovskite solar cell. J. Korean Phys. Soc. 80, 981–985 (2022). https://doi.org/10.1007/s40042-022-00435-9

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