Abstract
Transparent and conductive ZnO:Al (AZO) films were prepared by using RF magnetron sputtering at room temperature. The dependence of the sputtering pressure on the electrical, structural, and optical characteristics of the AZO thin films was analyzed. Lower sputtering pressure leads to low film resistivity owing to higher mobility and carrier concentration. This result is affected by the increment of the kinetic energy of the sputtered atoms and the decrement of the specific species, resulting in a rise in the Al content and the grain size and in a shrinkage of the surface bonding. The average transmittance of all films at visible wavelengths was above 85%. Therefore, the control of sputtering pressure performs a critical function in determining the characteristics of AZO samples and is a helpful process for acquiring films with superior characteristics.
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This paper was supported by Wonkwang University in 2021.
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Kim, D.K. Dependence of the sputtering pressure on the characteristics of sputtered ZnO:Al thin films. J. Korean Phys. Soc. 80, 410–414 (2022). https://doi.org/10.1007/s40042-022-00418-w
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DOI: https://doi.org/10.1007/s40042-022-00418-w