Abstract
Diamond is a promising material for next-generation power electronic devices used in high voltage and high temperature, but intrinsic defects introduced during the growth cause the degradation of electrical properties. There is a need to improve the crystal defect analysis method of analyzing large areas as non-destructive. Herein, the inclination of threading dislocations in an on-axis single-crystal free-standing diamond grown by microwave plasma-enhanced chemical vapor deposition (MPCVD) was analyzed using synchrotron white beam X-ray topography (SWBXRT). The majority of dislocations in CVD-grown diamond were known as [001] threading dislocation; however, SWBXRT indicated that the dislocations were not exact [001], but inclined from [001] direction. Dislocation inclination vector was calculated by g = <444> diffraction images, which determined direction and angle from [001] direction. The exact [001] dislocation accounted for 20% of investigated dislocations, and the remaining dislocations inclined randomly from the [001] direction with 7°–12°. The threading dislocations in the off-axis sample inclined in a particular direction due to step-flow dominant growth. The sample analyzed in this paper has no dependence on a particular direction due to localized step-flow caused by on-axis growth. Threading dislocations in an on-axis diamond inclined with a similar degree of well-controlled off-axis sample.
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This work was supported by the Korea Electrotechnology Research Institute (KERI) Primary Research Program through the National Research Council of Science & Technology (NST) funded by the Ministry of Science and ICT (MSIT) (No. 21A01063).
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Jang, H., Na, M., Bahng, W. et al. The inclination of threading dislocation in chemical vapor deposition-grown single-crystal diamond analyzed by synchrotron white beam X-ray topography. J. Korean Phys. Soc. 80, 175–184 (2022). https://doi.org/10.1007/s40042-021-00380-z
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DOI: https://doi.org/10.1007/s40042-021-00380-z