Skip to main content

Effect of reactive gases (NH3/N2) on silicon–nitride thin films deposited with diiodosilane (SiH2I2) precursors


A more in-depth study was conducted on silicon nitride thin films deposited using the space-divided plasma enhance atomic layer deposition (PE-ALD) method. Existing silicon nitride thin films are fabricated using thermal chemical vapor deposition (CVD) at high temperatures of 700 °C or higher with carbon (C)- and chlorine (Cl)-based precursors. However, the high process temperature and the high concentration of C and Cl in films cause a slew of issues for semiconductor integration. In this study, the silicon–nitride thin films have been deposited using the PE-ALD method and an iodine-based precursor to solve these problems. NH3 and N2 gases were used as the reactant gases. When N2 was used as the reactant gas instead of NH3, the concentration of the hydrogen (H) impurity was reduced from 19 to 15%. A plasma treatment was used to improve the density and remove the impurities in the thin films; the density of the thin films was confirmed to be 3.21 g/cm3, and the H concentration was 11%, indicating that the properties had improved. When a small amount of He gas was added to N2, the step coverage properties were improved up to 99.2%. The results of this study confirmed that silicon nitride thin films having superior properties can be produced using iodine-based precursors.

This is a preview of subscription content, access via your institution.

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8
Fig. 9
Fig. 10
Fig. 11
Fig. 12


  1. J.W. Lee, H.B. Kim, K.H. Choi, J. Korea Inst. Mat. Eng. 13, 51–58 (2018)

    Google Scholar 

  2. D. B. Semple, K.L. Nardi, N. Draeger, Dennis M. Hau. (2019) Chem. Mat. 31, 1635–1645.

  3. B. Rizwan Khan, B. Shone, G. Ko, J. K. Lee, H. S. Lee, J. Y. Park, Chem. Mat., 30, 7603-7610 (2018)

  4. J.B. Ko, H.I. Yeom, S.H. Park, IEEE 37, 39–42 (2016)

    Google Scholar 

  5. Y.S. Lee, J.H. Han, J.S. Park, Joz. Park, Am. Vac. Soc., 35, 1116 (2017)

  6. D.S. Jensen, S.S. Kanyal, N. Madaan, Surface Sci. 20, 26–31 (2013)

    Google Scholar 

  7. D.T Or, J. Collins, M Chang, Appl. Mat. Inc., 14, 808–815 (2016)

  8. J.H. Kim, E.Y. Oh, B.C. Ahn, D.G. Kim, Appl. Phys. Lett. 64, 775–780 (1994)

    ADS  Article  Google Scholar 

  9. T.K. Nam, H.H. Lee, T.J. Choi, S.G. Seo, C.M. Yoon, Appl. Sur. Sci. 485, 381–390 (2019)

    ADS  Article  Google Scholar 

  10. F. Koehler, D.H. Triyoso, I. Hussain, S. Mutas, H. Bernhardt, Mater. Sci. and Eng. 41, 53–56 (2012)

    Google Scholar 

  11. T. Tanimura, C. Hsiao, K. Akiyama, Y. Hirota, J. Sato, T. Kaitsuka, IEEE 28, 278–282 (2015)

    Google Scholar 

  12. B. Longjuan, Z. Yinfang, Y. Jinling, L. Yan, Z. Wei, X. Jing, L. Yunfei, Y. Fuhua, J. Semicond 53, 124–129 (2020)

    Google Scholar 

  13. R. Huszank, L. Csedreki, Z. Kerte, Z.F. Kerte, J. Radioanal. Nucl. Chem. 21, 118–123 (2015)

    Google Scholar 

  14. T. Tatsumi, S. Fukuda, S. Kadomura, J. Appl. Phys. 32, 335–339 (1993)

    Article  Google Scholar 

  15. T.-C. Yang, K.C. Saraswat, IEEE 47, 428 (2000)

    Google Scholar 

Download references

Author information

Authors and Affiliations


Corresponding author

Correspondence to Baek-Ju Lee.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Lee, BJ., Seo, DW. & Choi, JW. Effect of reactive gases (NH3/N2) on silicon–nitride thin films deposited with diiodosilane (SiH2I2) precursors. J. Korean Phys. Soc. 80, 311–319 (2022).

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI:


  • PE-ALD
  • Si3N4
  • Plasma treatment
  • Impurity concentration
  • Diiodosilane
  • LP-CVD