Abstract
Poly-Si films were fabricated through crystallization of silicon oxide (SiOx, 0 ≤ x < 2) by the action of an Al catalyst. The crystallization was carried out by thermally annealing a SiOx–Al bilayer formed on a SiO2 layer grown on Si wafer. The resulting poly-Si film was found to possess a higher crystallinity than amorphous silicon (a-Si). Transmission electron microscopy and energy dispersive X-ray spectroscopy results clearly indicated that layer exchange was achieved in the case of SiOx with a low x value, but no distinct layer exchange was observed in the case of SiOx with a high x value. Possible explanations for the poly-Si formation were given.
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Yoon, JH. Crystallization of silicon oxide films using Al as a catalyst. J. Korean Phys. Soc. 79, 746–750 (2021). https://doi.org/10.1007/s40042-021-00280-2
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DOI: https://doi.org/10.1007/s40042-021-00280-2