Abstract
This paper presents the development of a die-size high-power amplifier (0.25 µm power pHEMT) package model based on open-circuited package s-parameters for handling 10 Watt power and accommodating high gain. Package s-parameters are characterized by open condition and closed condition. Modeled package simulation is carried out in 3D electromagnetic simulation software CST. Initial package resonance simulations are carried out by using an eigenmode solver. Package input–output transitional analysis was also carried out using microstrip and strip lines to have minimum insertion loss and no impedance mismatch which affects the active MMIC performance. Package wall material (Kovar) is taken to be compatible with the hermetic sealing process, and base material (copper-tungsten) is taken because of its higher heat transfer properties, which is important in high-power device packaging. Fabricated empty package qualification and package assembly are carried out according to the space standards. This power amplifier resulted in a 20 dB gain 41dBm output power and power-added efficiency of 36.59 at a 3 dB gain compression point. High-power amplifier performance measurements are carried out as per the high-reliability space requirements at − 15 °C, + 25 °C, + 65 °C, and drift in parameters is within the allowed tolerances.
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The authors would like to thank the MMIC assembly section persons, testing persons, and QCQA persons of GAETEC for their enormous support during this complete work execution.
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Gugulothu, R., Bhalke, S., Lalkishore, K. et al. Package Modeling and Characterization of C-Band 10-Watt High-Power Amplifier Monolithic Microwave Integrated Circuit used in High-Reliability Applications. J. Inst. Eng. India Ser. B 103, 1677–1685 (2022). https://doi.org/10.1007/s40031-022-00769-9
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DOI: https://doi.org/10.1007/s40031-022-00769-9