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Controlled Self Compliance Filamentary Memory Behavior in Al/NiFe2O4/FTO Resistive Switching Device

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Proceedings of the National Academy of Sciences, India Section A: Physical Sciences Aims and scope Submit manuscript

Abstract

Herein, we report a controlled non-volatile bipolar resistive switching in nanostructured NiFe2O4 films using a capacitor like Al(aluminum)/NiFe2O4/FTO(fluorine-doped tin oxide) metal–insulator-metal device, which shows uniform resistive switching with a resistance ratio of high resistance state (HRS) to low resistance state (LRS) more than 3 × 102, accompanied with electroforming-free feature without any application of compliance current (ICC). The device can operate (read and switch) in small voltage and current ranges that makes it a low-power resistive switching device. The conduction mechanism in LRS was found to be Ohmic, whereas the HRS was governed by space charge-limited conduction mechanism. The current voltage and resistance temperature measurements indicate the presence of an interfacial AlOx layer with oxygen-related defects near the top Al/NiFe2O4 interface. The device exhibits good program/erase endurance properties, acceptable memory window, and uniform resistive switching. In addition, different intermediate resistance states between HRS and LRS can be obtained in a controlled manner by choosing different stop voltages during the gradual RESET process, which makes the device a multilevel RS device and a potential candidate for future non-volatile resistive random access memory (RRAM).

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Acknowledgments

Acknowledgment information is not applicable. For this research, no funding was received.

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Author notes

  1. Vidit Pandey and Priyanka Nehla have contributed equally to this work.

Authors and Affiliations

  1. Department of Physics, Aligarh Muslim University, Aligarh, 202002, India

    Vidit Pandey

  2. Department of Materials and Engineering, Ångström Laboratory, Uppsala University, 75103, Uppsala, SE, Sweden

    Priyanka Nehla

  3. Centre for Neutron Scattering, Ångström Laboratory, Uppsala University, 75103, Uppsala, SE, Sweden

    Priyanka Nehla

  4. National Forensic Sciences University, Goa, 403401, India

    Sandeep Munjal

Authors
  1. Vidit Pandey
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  2. Priyanka Nehla
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  3. Sandeep Munjal
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Correspondence to Sandeep Munjal.

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Pandey, V., Nehla, P. & Munjal, S. Controlled Self Compliance Filamentary Memory Behavior in Al/NiFe2O4/FTO Resistive Switching Device. Proc. Natl. Acad. Sci., India, Sect. A Phys. Sci. 93, 451–457 (2023). https://doi.org/10.1007/s40010-023-00842-y

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  • DOI: https://doi.org/10.1007/s40010-023-00842-y

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