A High Gain, Bulk Driven Operational Transconductance Amplifier (OTA) for Wireless Body Area Networks
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This paper presents a bulk driven operational transconductance amplifier (OTA) operating in weak inversion region. The OTA is designed and implemented in 1P-9M Standard UMC 90 nm CMOS Process, and achieves a gain of 94.4 dB and a unity gain bandwidth of 48.97 MHz. Positive feedback, gm boosted, source degeneration is employed at the input of bulk driven differential pair of the amplifier. An NMOS differential pair is used at the output stage to enhance the gain as well as the bandwidth. The OTA consumes power as low as 57 nW. Comparison with the previously reported designs is made on the basis of gain, noise power spectral density and bandwidth. The results show significant improvement in the performance of the proposed OTA as compared to previously reported designs. The effective chip area of this OTA is 0.0147 mm2.
KeywordsBulk driven OTA Weak inversion Differential pairs Low voltage Low power 90 nm CMOS
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