Abstract
Al1−xMox alloy deposits have been obtained by magnetron co-sputtering upon glass substrates in order to study their crystallographic structure and electrical properties. Layer thickness is about 3 µm. The microstructural analysis has been performed by X-ray diffraction and by transmission electron microscopy. The electrical characteristics were measured by the Van der Pauw method. The Al–Mo system deposit consists of two concomitant phases in varying concentrations when the molybdenum content increases. Regardless of the Mo concentration, the deposits are two-phase whom the degree of crystallinity evolves in opposite directions. The electrical conductivity remains substantially stable at low values regardless of the Mo concentration. Therefore, these deposits will have important uses, in particular in practical applications in modern technology fields as a diffusion barrier. The electrical conductivity values increase after annealing at the temperature of 773 K for 1h. The Al5Mo stable phase, expected by the equilibrium diagram, appears for each deposit in addition to other stable phases.
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Acknowledgements
This work was partially carried out at the “Université UTBM (site de Montbéliard)- FRANCE.” The authors are grateful to Pr. A. Billard for the fruitful discussions and experimental supports
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Highlights
- Al1−xMox alloy deposits have been obtained by magnetron co-sputtering upon glass substrates in order to study their crystallographic structure and electrical properties.
- Two metastable supersaturated solid solutions that coexist on all the elaborated layers.
- The electrical conductivity values increase after annealing compared to untreated deposits.
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Mosbah, A., Saker, A., Mekki, D.E. et al. Microstructure and Electrical Properties of the DC-sputtered Al1−xMox Alloys. Braz J Phys 51, 461–468 (2021). https://doi.org/10.1007/s13538-021-00896-6
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DOI: https://doi.org/10.1007/s13538-021-00896-6