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Effects of Dielectric Curing Temperature on the Interfacial Reliability of Cu/Ti/PBO for FOWLP Applications

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Abstract

In this study, the effect of curing temperatures of low-temperature curable polybenzoxazole (PBO) dielectrics on the interfacial adhesion energies between the Cu redistribution layer and PBO dielectric used in advanced fan-out packaging was systematically investigated using a four-point bending test. The results revealed that the interfacial adhesion energy increased when the PBO curing temperature increased from 175 to 200 °C, whereas it decreased when the curing temperature increased from 200 to 225 °C. The increase in the interfacial adhesion energy with an increase in the PBO curing temperature from 175 to 200 °C is attributed to the polymerization of PBO. However, the decrease in the interfacial adhesion energy as the curing temperature increases to 225 °C results from thermal stress.

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Acknowledgements

This work was supported by the National Research Foundation of Korea(NRF) grant funded by the Korea government(MEST) (Nos. 2022R1A2C1092453 and RS-2023-00239657) and the Public-private joint investment semiconductor R&D program(K-CHIPS) to foster high-quality human resources) (“RS-2023-00234159”, Routing design guided development of 3D scaling BEOL interconnect technology) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea) (1415187652). The authors would like to thank Dr. D. Kim at the Korea Institute of Materials Science for the test sample preparation.

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Authors and Affiliations

  1. School of Materials Science and Engineering, Andong National University, 1375, Gyeongdong-ro, Andong-Si, 36729, Gyeongsangbuk-do, Korea

    Gahui Kim, Young-Cheon Kim & Young-Bae Park

  2. STATS ChipPAC Korea Ltd, 191, Jayumuyeok-ro, Jung-gu, Incheon, 22379, Korea

    Kirak Son

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  1. Gahui Kim
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Correspondence to Young-Bae Park.

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Kim, G., Son, K., Kim, YC. et al. Effects of Dielectric Curing Temperature on the Interfacial Reliability of Cu/Ti/PBO for FOWLP Applications. Electron. Mater. Lett. 20, 393–401 (2024). https://doi.org/10.1007/s13391-024-00485-0

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