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Electronic Materials Letters

, Volume 14, Issue 4, pp 488–498 | Cite as

The Effect of Low Energy Nitrogen Ion Implantation on Graphene Nanosheets

  • Mukesh Mishra
  • Subbiah Alwarappan
  • Dinakar Kanjilal
  • Tanuja Mohanty
Article

Abstract

Herein, we report the effect 50 keV nitrogen ion implantation at varying fluence on the optical properties of graphene nanosheets (number of layers < 5). Initially, graphene nanosheets synthesized by the direct liquid exfoliation of graphite layers were deposited on a cleaned Si-substrate by drop cast method. These graphene nanosheets are implanted with 50 keV nitrogen-ion beam at six different fluences. Raman spectroscopic results show that the D, D′ and G peak get broadened up to the nitrogen ion fluence of 1 × 1015 ions/cm2, while 2D peak of graphene nanosheets disappeared for nitrogen-ions have fluence more than 1014 ions/cm2. However, further increase of fluence causes the indistinguishable superimposition of D, D′ and G peaks. Surface contact potential value analysis for ion implanted graphene nanosheets shows the increase in defect concentration from 1.15 × 1012 to 1.98 × 1014 defects/cm2 with increasing the nitrogen ion fluence, which resembles the Fermi level shift towards conduction band. XRD spectra confirmed that the crystallinity of graphene nanosheets was found to tamper with increasing fluence. These results revealed that the limit of nitrogen ion implantation resistant on the vibrational behaviors for graphene nanosheets was 1015 ions/cm2 that opens up the scope of application of graphene nanosheets in device fabrication for ion-active environment and space applications.

Graphical Abstract

Keywords

Graphene nanosheets Low energy ion implantation Fluence Defect concentration 

Notes

Acknowledgements

Authors MM, SA and TM are thankful to IUAC Delhi for carrying out Raman and FESEM measurements and CSIR-Central Electrochemical Research Institute Karaikudi, Tamilnadu, India for XPS measurement. One of the authors MM is thankful to CSIR, India for providing senior research fellowship [09/263(0838)/2010-EMR-I]. SA Acknowledges CSIR-CECRI for supporting his research with startup fund (OLP 0088). Author(s) thank Mr. Kennedy at CSIR-CECRI for assisting them with XPS measurements.

Compliance with Ethical Standards

Conflict of interest

The Authors declare that they have no conflict of interest.

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Copyright information

© The Korean Institute of Metals and Materials 2018

Authors and Affiliations

  1. 1.School of Physical SciencesJawaharlal Nehru UniversityNew DelhiIndia
  2. 2.CSIR-Central Electrochemical Research InstituteKaraikudiIndia
  3. 3.Inter University Accelerator CentreNew DelhiIndia

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