The Low Temperature Epitaxy of Strained GeSn Layers Using RTCVD System
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We have investigated the low temperature (LT) growth of GeSn–Ge–Si structures using rapid thermal chemical vapor deposition system utilizing Ge2H6 and SnCl4 as the reactive precursors. Due to inappropriate phenomena, such as, Ge etch and Sn segregation, it was hard to achieve high quality GeSn epitaxy at the temperature > 350 °C. On the contrary, we found that the SnCl4 promoted the reaction of Ge2H6 precursors in a certain process condition of LT, 240–360 °C. In return, we could perform the growth of GeSn epi layer with 7.7% of Sn and its remaining compressive strain of 71.7%. The surface propagated defects were increased with increasing the Sn content in the GeSn layer confirmed by TEM analysis. And we could calculate the activation energies at lower GeSn growth temperature regime using by Ge2H6 and SnCl4 precursors about 0.43 eV.
KeywordsRTCVD GeSn Ge2H6 SnCl4 HRXRD RSM
This work was supported by the Future Semiconductor Device Technology Development Program (Grant No. 10044651) funded By MOTIE (Ministry of Trade, Industry and Energy) and KSRC (Korea Semiconductor Research Consortium). It was also supported by the National Research Foundation of Korea (NRF) grant (NRF-2017R1A2B2003365) funded by the Ministry of Education, Republic of Korea. XRD samples were analyzed by Multi-Function X-ray Diffractometer (EMPYREAN, PANalytical) installed in the Center for Daegu Korea Basic Science Institute (KBSI).
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