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Numerical Analysis of InGaN/GaN Intermediate Band Solar Cells Under X-sun Concentration, In-compositions, and Doping: Unlocking the Potential of Concentrated Photovoltaics

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Abstract

Our research focuses on advancing solar energy through the study of nano- and microelectronic structures. Using the finite element method, we analyze key characteristics of InGaN/GaN intermediate band solar cells (IBSC), including refractive index, absorption coefficient, short-circuit current, open-circuit voltage, fill factor, and efficiency with a focus on the X-sun concentration effect. We assess nonpolar solar cell performance at room temperature and incorporate experimental data from American Society for Testing and Materials (ASTM), encompassing AM1.5D, AM1.5G, and AM0, to analyze refractive and absorption spectra. Investigating constraints on solar cell efficiency, we find that under AM1.5G spectra, the short-circuit current is higher compared to AM1.5D and AM0. Additionally, open-circuit voltage, fill factor, and efficiency increase significantly with elevated X-sun concentration and doping. Our analysis of ASTM data indicates that InGaN-based IBSC are efficiently able to absorb the visible spectrum and withstand intense X-sun concentration, making them suitable for concentrated photovoltaic technology.

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Data Availability

The numerical data utilized in this study are available upon request. The data associated with the manuscript is provided in the form of a Python file (file.py).

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Acknowledgements

We would like to express our sincere gratitude for the financial support received from the National Center for Scientific and Technical Research (CNRST: Morocco) and the Scientific and Technological Research Institution (TÜBİTAK: Turkey) through the bilateral project CNRST/TÜBİTAK for the period of 2023–2025.

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Authors and Affiliations

  1. MPIS Group, ENSAM Laboratory, Hassan 2 University, 20670, Casablanca, Morocco

    Haddou El Ghazi

  2. Department of Nanoscience and Nanoengineering, Institute of Science and Technology, Necmettin Erbakan University, 42090, Konya, Turkey

    Yasin Ecker Ramazan

  3. LPS, FSDM, Sidi Mohammed Ben Abdellah University, Fes, Morocco

    Redouane En-nadir

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Contributions

HEG conceptualized and discussed the idea presented. YER, RE, and HEG jointly developed the theoretical framework and conducted the necessary calculations. They verified the programming, implemented the computer code, and oversaw the integration of supporting code components. Additionally, they provided supervision throughout the process of obtaining results. HEG, REN, and YER actively contributed to the implementation of the research, analyzed the obtained results, and participated in the writing, reviewing, and editing of the manuscript.

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Correspondence to Haddou El Ghazi.

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Ghazi, H.E., Ramazan, Y.E. & En-nadir, R. Numerical Analysis of InGaN/GaN Intermediate Band Solar Cells Under X-sun Concentration, In-compositions, and Doping: Unlocking the Potential of Concentrated Photovoltaics. Arab J Sci Eng 49, 9885–9894 (2024). https://doi.org/10.1007/s13369-023-08645-4

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