Abstract
Spray-synthesized yttrium-doped CuSe with emphasis on the effect of substrate temperature ranging from 140 to 200 °C photovoltaics/optoelectronic properties is reported in this study. The energy dispersive spectroscopy investigation confirmed the existence of dopant Y in CuSe thin material. The scanning electron microscopy studies reveal a rough but dense surface morphology, while the X-ray diffraction (XRD) result depicts a cubic polycrystalline structure for all the films with the most preferred orientation at (111) plane without the substrate temperature. The XRD studies showed the highest peak intensity at the substrate temperature of 140 °C which declines as the temperature increases up to 200 °C. From the spectrophotometry studies, all the samples exhibited their peak absorbance value at the UV region of the spectrum (< 400 nm) with films at 140 °C and 160 °C having the highest value. As the temperature of the substrate rises from 140 to 200 °C, bandgap energies ranging from 1.44 to 1.80 eV were observed. The four-point probe revealed that the variation in temperature of the substrate influenced the film thickness and electrical property of the materials. With increased temperature, the film thickness was seen to increase from 152.42 to 198.02 nm with an increase in resistivity and decrease in conductivity.
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Akpu, N.I., Asiegbu, A.D., Nnanna, L.A. et al. Influence of Substrate Temperature on the Photovoltaic/Optoelectronic properties of Spray-Synthesized Yttrium Copper Selenide (YCS) Thin Films. Arab J Sci Eng 47, 7639–7646 (2022). https://doi.org/10.1007/s13369-021-06455-0
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DOI: https://doi.org/10.1007/s13369-021-06455-0