Optimized Bends and Corporate ${{1\times4}}$ and ${{ 1\times8}}$ SIW Power Dividers Junctions Analysis for V-Band Applications Using a Rigorous Finite Element Method

Abstract

In this paper, two classes of V-band substrate integrated waveguide (SIW) bends operating in V-band frequency in the range [58–63 GHz] for the ${90^{\circ}}$ SIW bend with inductive via and in the range [57–68 GHz] for the circular SIW bend and corporate ${1\times4}$ and ${1\times8}$ SIW power dividers that provide equal power split with high isolation in all output ports operating in V-band [45–80 GHz] are presented and studied. The advantages of the SIW technique are its low profile, low cost, mass production, ease of fabrication and full integration with planar circuits. All the SIW bend topologies are optimized and designed to operate in the V-band frequency range. The bends and dividers are analyzed using the two-dimensional finite element method (2D-FEM). The analysis was performed in H-plane using a powerful full-wave method based on the two-dimensional finite element method (2D-FEM) programmed under MATLAB environment. The return losses, transmission coefficients and the field’s distribution are exposed in this paper. To validate our results numerically, a comparison is made and the obtained results are compared with those given by the CST Microwave Studio. It is observed that the simulation computation time is reduced with good accuracy since the discretization was done only in two dimensions.