Abstract
The frequency response of a dual depletion p-i-n (PIN) photodiode structure is investigated. It is assumed that the light is incident on the N side and the drift region is located between the N contact and the absorption region. The numerical model takes into account the transit time and the capacitive effects and is applied to photodiodes with non-uniform illumination and linear electric field profile. With an adequate choice of the device’s structural parameters, dual depletion photodiodes can have larger bandwidths than the conventional PIN devices.
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Pereira, J.M.T., Torres, J.P.N. Frequency response optimization of dual depletion InGaAs/InP PIN photodiodes. Photonic Sens 6, 63–70 (2016). https://doi.org/10.1007/s13320-015-0296-2
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DOI: https://doi.org/10.1007/s13320-015-0296-2