Abstract
In recent years, ion-beam irradiation (IBI) has been proven an effective approach for the mass production of nanopatterns on the surfaces of wide range of materials. However, the role of different ion beam masses (Ar and Kr) needs attention for potential use of ripple patterns in wettability applications. In this work, we present a systematic study on the growth of ripple patterns for the two different projectiles of Ar+ and Kr+ and, furthermore, their anisotropic behaviour of wettability. An increase in wavelength and amplitude of ripples on Si (100) surface with increase in ion beam energy from 60 to100 keV has been observed. Wavelength of ripples is found to be higher for the Ar+ as compared to Kr+ at each irradiation energy value. A power law dependency of ripple wavelength on ion beam energy has been proposed as λ ~ Em, where ‘m’ is found to be 0.48 ± 0.0008 for Ar+ and 0.85 ± 0.06 for Kr+ beam, which shows the importance of mass re-distribution in ripples growth. Furthermore, observed variation in the contact angle is found to be deviated from Wenzel's law which is attributed to a reduction in the surface free energy of ion implanted Si ripple surfaces. Hence, the near surface damage under the incorporation of Ar/Kr atoms alters the chemical composition and which is effectively controlling the anisotropic wettability of ripples.
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Acknowledgements
The help received from Dr. Indra Sulania, IUAC, New Delhi for AFM characterization is gratefully acknowledged here. We are also thankful to Dr. D. Kanjilal, IUAC, New Delhi, for helping in experimental work.
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Vandana, Kumar, T., Ojha, S. et al. Energy-dependent surface nanopatterning of Si (100) for different projectiles: a tunable anisotropic wettability of ripple surface. Appl Nanosci 13, 3189–3196 (2023). https://doi.org/10.1007/s13204-021-01975-5
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DOI: https://doi.org/10.1007/s13204-021-01975-5