Abstract
Present work reports capacitance-conductance spectroscopic investigations of the selective swift heavy ion irradiated 4H–SiC based Schottky diodes. All measurements are performed under forward bias and in the frequency range from 100 Hz to 1 MHz. Compared to pristine ones, significant shift in the position and height of the peaks in the capacitance–voltage characteristics are observed after selective irradiation of the devices. These findings are discussed on the basis of interfacial modifications carried out by the electronic energy loss mechanism of the impinge ions. Additionally, Raman spectroscopic investigations have been performed to unveil the bulk modifications in the material under reference. A decrease in the peak intensity and occurrence of distorted-SiC peaks in the selectively irradiated material is observed. Such results are explained by taking into account the nuclear energy loss mechanism of the ions at the end of their range in the material under reference.
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One of the authors (VK) would like to thank staff members of CSIR-CEERI, Pilani and technical staff of IUAC, New Delhi, India for their help and support in device fabrication and ion irradiation facility.
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Kumar, V., Kumar, S., Maan, A.S. et al. Interfacial and structural analysis of MeV heavy ion irradiated SiC. Appl Nanosci 13, 3181–3188 (2023). https://doi.org/10.1007/s13204-021-01921-5
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DOI: https://doi.org/10.1007/s13204-021-01921-5