Abstract
Here, we have focused on electronic and optical properties of heterostructure C3As/arsenene under vertical strain and electric field using density functional theory. The phonon dispersion calculation reveals the stability of the monolayer C3As. In addition, the tunable electronic properties of heterolayer C3As/arsenene have been discussed by addressing vertical strain and electric field. The bandgaps were tuned from 0.75 to 1.6 eV as indirect-to-direct transition by accounting vertical strain and for electric field, it is decreases upto 0.25 eV. The modulation of the strain and electric field in C3As/arsenene heterolayer was investigated by the interlayer interaction strength of the layers. Moreover, the calculated optical absorption shows the strongly in UV, while weakly absorption in the visible spectrum. Therefore, the results show good structure tunablity by external strain and electric field for electronic photodetector device applications.
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Acknowledgements
Y. A. S is thankful to the Science and Engineering Research Board (SERB), India for the financial support (Grant numbers: EEQ/2016/000217). Computational facilities from the Center for Development of Advance Computing (C-DAC) Pune are also gratefully acknowledged.
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Kansara, S., Sonvane, Y. & Gupta, S.K. Modulation of vertical strain and electric field on C3As/arsenene heterostructure. Appl Nanosci 10, 107–116 (2020). https://doi.org/10.1007/s13204-019-01034-0
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DOI: https://doi.org/10.1007/s13204-019-01034-0