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Applied Nanoscience

, Volume 8, Issue 5, pp 949–953 | Cite as

Formation of the InAs-, InSb-, GaAs-, and GaSb-polished surface

  • Iryna LevchenkoEmail author
  • Vasyl Tomashyk
  • Iryna Stratiychuk
  • Galyna Malanych
  • Andrii Korchovyi
  • Serhii Kryvyi
  • Oleksandr Kolomys
Original Article

Abstract

The features of the InAs, InSb, GaAs, and GaSb ultra-smooth surface have been investigated using chemical–mechanical polishing with the (NH4)2Cr2O7–HBr–CH2(OH)CH2(OH)-etching solutions. The etching rate of the semiconductors has been measured as a function of the solution saturation by organic solvent (ethylene glycol). It was found that mechanical effect significantly increases the etching rate from 1.5 to 57 µm/min, and the increase of the organic solvent concentration promotes the decrease of the damaged layer-removing rate. According to AFM, RS, HRXRD results, the treatment with the (NH4)2Cr2O7–HBr–ethylene glycol solutions produces the clean surface of the nanosize level (Ra < 0.5 nm).

Keywords

Semiconductor Chemical–mechanical polishing Ultra-smooth surface 

Notes

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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  1. 1.V. Lashkaryov Institute of Semiconductor Physics NAS of UkraineKyivUkraine

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