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Charge-carrier relaxation in sonochemically fabricated dendronized CaSiO3–SiO2–Si nanoheterostructures

  • Rada Savkina
  • Aleksey Smirnov
  • Svitlana Kirilova
  • Volodymyr Shmid
  • Artem Podolian
  • Andriy Nadtochiy
  • Volodymyr Odarych
  • Oleg Korotchenkov
Original Article
  • 5 Downloads

Abstract

We present systematic studies of charge-carrier relaxation processes in sonochemically nanostructured silicon wafers. Impedance spectroscopy and transient photovoltage techniques are employed. It is found that interface potential in Si wafers remarkably increases upon their exposure to sonochemical treatments in Ca-rich environments. In contrast, the density of fast interface electron states remains almost unchanged. It is found that the initial photovoltage decay, taken before ultrasonic treatments, exhibits the involvement of shorter- and longer time recombination and trapping centers. The decay speeds up remarkably due to cavitation treatments, which is accompanied by a substantial quenching of the photovoltage magnitude. It is also found that, before the treatments, the photovoltage magnitude is markedly non-uniform over the wafer surface, implying the existence of distributed sites affecting distribution of photoexcited carriers. The treatments cause an overall broadening of the photovoltage distribution. Furthermore, impedance measurements monitor the progress in surface structuring relevant to several relaxation processes. We believe that sonochemical nanostructuring of silicon wafers with dendronized CaSiO3 may enable new promising avenue towards low-cost solar energy efficiency multilayered solar cell device structures.

Keywords

Cavitation Silicon Nanoheterostructure Surface photovoltaic effect 

Notes

References

  1. Angermann H (2008) Passivation of structured p-type silicon interfaces: effect of surface morphology and wet-chemical pre-treatment. Appl Surf Sci 254:8067CrossRefGoogle Scholar
  2. Baicker JA (1963) Recombination and trapping in normal and electron-irradiated silicon. Phys Rev 129:1174–1180CrossRefGoogle Scholar
  3. Baker-Finch SC, McIntosh KR, Terry ML (2012) Isotextured silicon solar cell analysis and modeling 1: optics. IEEE J Photovolt 2:457–464.  https://doi.org/10.1109/JPHOTOV.2012.2206569 CrossRefGoogle Scholar
  4. Bisquert J, Fabregat-Santiago F (2010) Impedance spectroscopy: a general introduction and application to dye-sensitized solar cells. CRC Press, Boca RatonGoogle Scholar
  5. Grant DT, Catchpole KR, Weber KJ, White TP (2016) Design guidelines for perovskite/silicon 2-terminal tandem solar cells: an optical study. Opt Express 24:1454–1470CrossRefGoogle Scholar
  6. Green MA (2002) Lambertian light trapping in textured solar cells and light-emitting diodes: analytical solutions. Prog Photovolt Res Appl 10:235–241.  https://doi.org/10.1002/pip.404 CrossRefGoogle Scholar
  7. Horcas I et al (2007) WSxM: a software for scanning probe microscopy and a tool for nanotechnology. Rev Sci Instrum 78:013705–013705-8CrossRefGoogle Scholar
  8. Jeon NJ, Noh JH, Yang WS, Kim YC, Ryu S, Seo J, Seok SI (2015) Compositional engineering of perovskite materials for high-performance solar cells. Nature 517:476–480CrossRefGoogle Scholar
  9. Kenyon AJ et al (1996) The origin of photoluminescence from thin films of silicon-rich silica. J Appl Phys 79:9291–9300CrossRefGoogle Scholar
  10. Mandelis A (2005) Theory of space-charge layer dynamics at oxide-semiconductor interfaces under optical modulation and detection by laser photocarrier radiometry. J Appl Phys 97:083508CrossRefGoogle Scholar
  11. Munakata C (2007) Decay times of impulse surface photovoltages in p-type silicon wafers. Jpn J Appl Phys 46:6592CrossRefGoogle Scholar
  12. Nadtochiy A, Podolian A, Korotchenkov O, Schmid J, Kancsar E, Schlosser V (2011) Water-based sonochemical cleaning in the manufacturing of high-efficiency photovoltaic silicon wafers. Phys Stat Sol C8:2927–2930Google Scholar
  13. Nesheva D et al (2002) Raman scattering and photoluminescence from Si nanoparticles in annealed SiOx thin films. J Appl Phys 92:4678–4683CrossRefGoogle Scholar
  14. Ni SY, Chang J, Chou L, Zhai WY (2007) Comparison of osteoblast-like cell responses to calcium silicate and tricalcium phosphate ceramics in vitro. J Biomed Mater Res B 80:174–183CrossRefGoogle Scholar
  15. Pan Y, Zuo K, Yao D, Yin J, Xin Y, Xia Y, Liang H, Zeng Y (2016) The improved mechanical properties of β-CaSiO3 bioceramics with Si3N4 addition. J Mech Behav Biomed Mater 55:120–126CrossRefGoogle Scholar
  16. Podolian A, Kozachenko V, Nadtochiy A, Borovoy N, Korotchenkov O (2010) Photovoltage transients at fullerene-metal interfaces. J Appl Phys 107:093706CrossRefGoogle Scholar
  17. Primachenko V, Snitko O (1988) Physics of the metal doped semiconductor surface. Kyiv, Naukova dumka, p 232Google Scholar
  18. Rozenberg LD (1969) Sources of high-intensity ultrasound (ultrasonic technology), vol 1. Springer, Berlin, pp 223–315CrossRefGoogle Scholar
  19. Savkina RK, Smirnov AB (2010) Nitrogen incorporation into GaAs lattice as a result of the surface cavitation effect. J Phys D Appl Phys 43(42):425301–425307CrossRefGoogle Scholar
  20. Savkina RK, Smirnov AB, Kryshtab T, Kryvko A (2015) Sonosynthesis of microstructures array for semiconductor photovoltaics. Mater Sci Semicond Process 37:179–184CrossRefGoogle Scholar
  21. Savkina RK, Gudymenko AI, Kladko VP, Korchovyi AA, Nikolenko AS, Smirnov AB, Stara TR, Strelchuk VV (2016) Silicon substrate strained and structured via cavitation effect for photovoltaic and biomedical application. Nanoscale Res Lett 11:183CrossRefGoogle Scholar
  22. Savkina RK, Smirnov AB, Gudymenko AI, Morozhenko VA, Nikolenko AS, Smoliy MI, Кryshtab TG (2018) Silicon surface functionalization based on cavitation processing. Surf Coat Technol 343:17–23CrossRefGoogle Scholar
  23. Shimizu-Iwayama T, Nakao S, Saitoh K, Fujita T, Itoh N (1994) Visible photoluminescence in Si+-implanted silica glass. J Appl Phys 75:7779–7783CrossRefGoogle Scholar
  24. Yang WS, Noh JH, JeonNJ Kim YC, Ryu S, Seo J, Seok SI (2015) High-performance photovoltaic perovskite layers fabricated through intramolecular exchange. Science 348:1234–1237CrossRefGoogle Scholar

Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  1. 1.V. Lashkaryov Institute of Semiconductor PhysicsNAS of UkraineKievUkraine
  2. 2.Taras Shevchenko National University of KyivKievUkraine

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