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Characterisation of ZrAl and ZrAlN Thin Films Prepared by Pulsed DC Magnetron Sputtering

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Abstract

Thin films of ZrAl and ZrAlN were deposited on Si(100) substrates in the temperature range 300–773 K and with varying nitrogen flow rate from 0 to 10 sccm by co-sputtering of Zr (99.9 % purity) and Al (99.9 % purity) targets using a single pulsed power supply. At substrate temperature of 773 K, ZrAl thin films crystallized in hcp structure. The nitrogen flow rate was found to significantly influence the phase formation in ZrAlN films with the formation of fcc structure with a nitrogen flow rates in the range 1–2 sccm. The electrical resistivity of ZrAl films decreased from 62 to 24 μΩ cm with increase of substrate temperature, while it increased with nitrogen flow rate as a consequence of change in crystal structure and decrease in the crystallite size. Nanohardness measurements indicated a maximum hardness and elastic modulus of 20 and 369 GPa, respectively for ZrAlN films deposited at 773 K and 1 sccm of nitrogen flow rate.

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Acknowledgments

The authors are thankful to Smt. M. Jyothi for substrate preparation and XRD analysis.They are also grateful to Dr. M. Vijayalakshmi, AD, PMG, Dr. T. Jayakumar, Director, Metallurgy and Materials Group and Shri S. C. Chetal, Director, IGCAR for the support and encouragement.

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Authors and Affiliations

  1. Physical Metallurgy Group, Materials Synthesis and Structural Characterisation Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, 603 102, India

    Akash Singh, P. Kuppusami, R. Thirumurugesan & E. Mohandas

  2. Material Science Group, Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, 603 102, India

    R. Ramaseshan & S. Dash

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  1. Akash Singh
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  2. P. Kuppusami
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  3. R. Thirumurugesan
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  4. R. Ramaseshan
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  5. S. Dash
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  6. E. Mohandas
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Correspondence to Akash Singh.

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Singh, A., Kuppusami, P., Thirumurugesan, R. et al. Characterisation of ZrAl and ZrAlN Thin Films Prepared by Pulsed DC Magnetron Sputtering. Trans Indian Inst Met 66, 363–367 (2013). https://doi.org/10.1007/s12666-013-0248-8

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  • DOI: https://doi.org/10.1007/s12666-013-0248-8

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