Abstract
In a double-barrier heterostructure made of (AlGaN/GaN), the tunneling effect has been investigated, and the probability that electrons will pass through the barrier has been determined. As the temperature fluctuates, the likelihood of tunneling changes. Here, tunneling has been measured at a very low temperature. The heterostructure has demonstrated the possible distribution. The tunneling current for an AlGaN/GaN heterostructure with a double barrier of nitride has been tracked. The work proposes a model of trap-assisted tunneling that can quantitatively assess the impact of traps on the total current flowing through a heterostructure made of GaN, AlGaN, and GaN. The basis of the model is the expression of the occupation probability of the electron trapping centers in terms of thermal and tunneling exchange periods. (Kneissl M et al. in Nature Photonics 13: 233, 2019) The investigation focused on examining the tunneling effect within a double-barrier (AlGaN/GaN) heterostructure. The research aimed to determine the likelihood of electrons tunneling through the barriers, and this tunneling probability was assessed in the context of temperature variations. Specifically, the study conducted measurements of tunneling probability at an exceptionally low temperature of 77 K. The findings indicate that the probability of tunneling is temperature-dependent, with a particular emphasis on the conditions prevalent at very low temperatures.
Similar content being viewed by others
Data availability
No data were used for the research described in the manuscript.
References
M Kneissl, T Seong, J Han and H Amano Nature Photonics 13 233 (2019).
D Li, S Liu, Z Qian et al Adv. Mater. 34 2109765 (2022).
J S ChenLoeb and J H Kim Environ. Sci. Water Res. Technol. 3 188 (2017).
D Bayerl and E Kioupakis Appl. Phys. Lett. 115 131101 (2019).
A Aiello, Y Wu, A Pandey et al Nano Lett. 19 7852 (2019).
A A Toropov, E A Evropeitsev, M O Nestoklon et al Nano Lett. 20 158 (2020).
F Wu, J Zhang, S Wang et al Opt. Mater. Express 5 2608 (2015).
J M Barker, R Akis, T J Thornton and D K S M FerryGoodnick Phys B Condens. Matter 314 39 (2002).
R Collazo, R Schlesser, A Roskowski, R F Davis and Z Sitar MRS Proceed. 743 102 (2002).
M Wraback, H Shen, S Rudin and E Bellotti Phys. Status Solidi b 234 810 (2002).
S Schmult, M J Manfra, A M Sergent, A Punnoose and H T Chou Phys. Status Solidi b 243 1706 (2006).
Y Kawakami, X Q Shen, G Piao, M Shimizu and H Okumuraa J. Cryst. Growth 300 168 (2007).
Y Wang, Q Wu, S Mao et al IEEE Electron Device Lett. 42 677 (2021).
H Lu, X A Cao, S F LeBoeuf et al J. Crystal Growth 291 82 (2006).
U K Mishra, P Parikh and Wu Yi-Feng Proceed. IEEE 90 1022 (2002).
N Grandjean, J Massies, M Leroux et al MRS Internet J. Nitride Semicond. Res. 4 962 (1999).
V Nagarajan, K M Chen, H Y Lim et al IEEE Trans. Nanotechnol. 19 405 (2020).
M J Manfra, K W Baldwin, A M Sergent et al Appl. Phys. Lett. 85 5394 (2004).
B J Baliga Semicond. Sci. Technol. 28 074011 (2013).
N Ikeda, Y Niiyama, H Kambayashi et al Proceed. IEEE 98 1151 (2010).
S P DenBaars, D Feezell, K Kelchner et al Acta Mater. 61 945 (2013).
C Gmachl, M Hock, S N Ng, C George and A Y Cho Appl. Phys. Lett. 77 3722 (2000).
A Vardi, N Kheirodin, L Nevou et al Appl. Phys. Lett. 92 011112 (2008).
E Baumann, F R Giorgetta, D Hofstetter et al Appl. Phys. Lett. 89 041106 (2006).
X Rong, X Q Wang, G Chen et al Sci. Rep. 5 14386 (2015).
S T M NakamuraMukaiSenoh J. Appl. Phys. 76 8189 (1994).
Acknowledgements
The authors would like to thank the researchers supporting project number (RSP2024R55), King Saud University, Riyadh, Saudi Arabia, for financial support.
Author information
Authors and Affiliations
Contributions
All authors contributed to the study's conception and design. Material preparation, data collection, and analysis were performed by [Jyoti Patil, Yogesh B. Khollam], [Umeash T. Nakate, Shoyebmohamad F. Shaikh,] and [Abdullah M. Al-Enizi, Pravin S. More]. The first draft of the manuscript was written by [Jyoti Patil] and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript. Jyoti Patil contribute to this work.
Corresponding author
Ethics declarations
Conflict of interest
The author declares that there is no conflict of interest regarding the publication of this manuscript.
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Supplementary Information
Below is the link to the electronic supplementary material.
Rights and permissions
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
About this article
Cite this article
Patil, J., Shaikh, S.F., Nakate, U.T. et al. Effect of tunnelling in double barrier nitride (AlGaN/GaN) heterojunction. Indian J Phys (2024). https://doi.org/10.1007/s12648-024-03234-z
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s12648-024-03234-z