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Influence of electromagnetic field on Gaussian entropy and ground-state lifetime in impurity-center quantum dot with spherical Gaussian confining potential

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Abstract

In this paper, we construct a simple qubit using impurity-center quantum dots with a spherical Gaussian confining potential and analyze the rationality and superiority of this kind of qubit. Based on the Pekar-type variational method, Gaussian entropy and ground-state lifetime expressions under an electromagnetic field environment are derived. The numerical results show that the variation of Gaussian entropy of the system with the change of the quantum dot confinement range presents an inverted asymmetric "Gaussian distribution", and the time evolution of the Gaussian entropy presents the characteristics of plane wave propagation. The oscillation amplitude of Gaussian entropy decreases with increasing the electric field intensity but increases with increasing the magnetic induction intensity. However, the oscillation period of Gaussian entropy increases with increasing the electric field intensity but decreases with increasing the magnetic induction intensity. The ground-state lifetime of the system increases with increasing the well depth of the confining potential and the dielectric constant ratio of the quantum dots but decreases with increasing the confining potential range and electron–phonon coupling constant, respectively. The ground-state lifetime decreases with increasing temperature and electric field intensity, respectively, but increases with increasing the magnetic induction intensity. The conclusions of this paper can provide a reference for constructing the qubit using semiconductor quantum dots, optimizing information storage and transmission, and suppressing decoherence.

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Acknowledgements

This work was supported by the scientific research foundation of Hebei Normal University of Science &Technology

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Authors and Affiliations

  1. Institute of Condensed Matter Physics, Hebei Normal University of Science and Technology, Qinhuangdao, 066004, China

    Wei Xin

  2. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

    Wei Xin

  3. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China

    Wei Xin

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  1. Wei Xin
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Correspondence to Wei Xin.

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Xin, W. Influence of electromagnetic field on Gaussian entropy and ground-state lifetime in impurity-center quantum dot with spherical Gaussian confining potential. Indian J Phys 97, 3931–3940 (2023). https://doi.org/10.1007/s12648-023-02731-x

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  • DOI: https://doi.org/10.1007/s12648-023-02731-x

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