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Recombination and mobility analysis of voltage preserved type-A InP multiple quantum well GaInP solar cell

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Abstract

The insertion of quantum well (QW) in intermediate band (IB) region enhances the short-circuit current (\({I}_{\mathrm{sc}}\)), in most of the IB solar cell (SC). But it results in open-circuit voltage (\({V}_{\mathrm{oc}}\)) degradation due to increased recombination. In this work, the type-A InP QW structure is designed in GaInP multiple QW solar cell with voltage preservation technique. The absorption of sub-bandgap energy enhances \({I}_{\mathrm{sc}}\) and slightly reduces the \({V}_{\mathrm{oc}}\). The bound state energy band diagram shows mini-band formation in QW region. The radiative recombination is a dominant factor in these mini bands. The performance of the solar cell increases up to 20 QW periods. After 20 QW periods, the reduction in overall performance of the solar cell is observed. This has been analyzed using recombination and mobility analysis. The highest \({I}_{\mathrm{sc}}\) = 20.76 mA/\({\mathrm{cm}}^{2}\) with \({V}_{\mathrm{oc}}\) = 1.41967 V results in superior efficiency of 24.51% for the designed solar cell. The effect of multiple QW periods in both quantum efficiencies (EQE and IQE) is analyzed, and the obtained \(\eta_{{{\text{EQE}}}}\) and \(\eta_{{{\text{IQE}}}} \) of the periodic QW model are well above 85%. The associated problems of performance degradation are also discussed.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology Raipur, Raipur, Chhattisgarh, 492010, India

    Manish Verma & Guru Prasad Mishra

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  1. Manish Verma
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  2. Guru Prasad Mishra
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Correspondence to Guru Prasad Mishra.

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Verma, M., Mishra, G.P. Recombination and mobility analysis of voltage preserved type-A InP multiple quantum well GaInP solar cell. Indian J Phys 96, 4119–4130 (2022). https://doi.org/10.1007/s12648-022-02352-w

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  • DOI: https://doi.org/10.1007/s12648-022-02352-w

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