Abstract
Numerical simulation is used in this work to model the effect of 1 MeV neutron irradiation on the performance degradation of a \(p^+-n-n^+\) GaAs solar cell. The effect is predicted by the calculation of the current–voltage characteristics under AM0 illumination for a constant dose of neutron irradiation. The solar cell output parameters (the short-circuit current density \(J_{{\rm sc}}\), the open-circuit voltage \(V_{{\rm oc}}\), the fill factor FF and the conversion efficiency \(\eta\)) are extracted from these characteristics. The neutron irradiation induced five electron traps En1, En2, En3, En4 and En5 in the energy gap either as recombination centers or traps. The degradation by the induced traps is widely attributed to the first type of defects. Simulating the effect of each trap level separately helps to find out which of them is responsible for the degradation of a particular output parameter. The simulation results have shown that the \(p^+-n-n^+\) GaAs solar cell degradation is very apparent at \(10^{14}\) cm\(^{-2}\) neutron irradiation fluence. The deepest electron trap En5, with largest capture cross section, is responsible for the degradation of \(J_{{\rm sc}}\) and \(\eta\). The other electron traps En1, En2, En3 and En4 have a no significant effect on the solar cell output parameters, particularly on the open-circuit voltage \(V_{{\rm oc}}\). Finally, the solar cell resistivity to the neutron irradiation can be improved by decreasing the thickness of \(p^+ {\rm GaAs}\) emitter layer from 0.44 to 0.1 \(\upmu\)m with keeping a gradual \({\rm Al}_x\) \({\rm Ga}_{1-x}{\rm As}\) window thickness of 0.09 \(\upmu\)m.
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References
M Yamaguchi Solar Energy Mater.Solar Cells 68 31 (2001)
J C Bourgoin and N de Angelis Solar Energy Mater. Solar Cells 66 467 (2001)
M Radu, V Ghenescu, I Stan, L Ion, C Besleaga, A Nicolaev and M Ghenescu Chalcogenide Lett. 8 477 (2011)
S Antohe, V Ghenescu, S Iftimie, A Radu, O Toma and L Ion Digest J. Nanomater. Biostruct. (DJNB) 7 (2012)
O Toma, L Ion, M Girtan and S Antohe Solar Energy 108 51 (2014)
F Lang, N H Nickel, J Bundesmann, S Seidel, A Denker, S Albrecht and H C Neitzert Adv. Mater. 28 8726 (2016)
Y Miyazawa, M Ikegami, T Miyasaka, T Ohshima, M Imaizumi and K Hirose IEEE 42nd Photovoltaic Specialist Conference (PVSC). IEEE 1 (2015)
J S Huang, M D Kelzenberg, P Espinet-González, C Mann, D Walker, A Naqavi and H A Atwater IEEE 44th Photovoltaic Specialist Conference (PVSC). IEEE 1248 (2017)
N Takata, H Kurakata, S Matsuda, T Okuno, S Yoshida, H Matsumoto, M Goto, M Ohkubo and M Ohmura IEEE Conference on Photovoltaic Specialists 2 1219 (1990)
N Asim, K Sopian, S Ahmadi, K Saeedfar, M Alghoul, O Saadatian and S H Zaidi Renew.Sustain. Energy Rev. 16 5834 (2012)
L M Fraas and L D Partain Solar Cells Their Appl. 236 (2010)
J Lilensten Le système solaire revisité Ed. Eyrolles (2006)
R Y Loo, G S Kamath, S S Li IEEE Trans. Electron Dev. 37 485 (1990)
J H Warner, S R Messenger, R J Walters, G P Summers, J R Lorentzen, D M Wilt and M A Smith et al. IEEE Trans. Nucl. Sci. 53 1988 (2006)
V Ruxandra and S Antohe J. Appl. Phys. 84 727 (1998)
S Antohe, L Ion and V Ruxandra J. Appl. Phys. 90 5928 (2001)
S Antohe, L Ion and V A Antohe J. Optoelectron. Adv. Mater. 5 801 (2003)
S Antohe, L Ion, V A Antohe, M Ghenescu and H Alexandru J. Optoelectron. Adv. Mater. 9 1382 (2007)
O Toma, L Ion, S Iftimie, A Radu and A Antohe Mater. Des. 100 198 (2016)
O Toma, L Ion, S Iftimie, V A Antohe, A Radu, A M Raduta and S Antohe Appl.Surf. Sci. 478 831(2019)
F D Auret, A Goodman, S G Myburg, O W Barnard and T L D Jones J. Appl. Phys. 4339 4339 (1993)
C Axness, B Kerr and E Keiter IEEE Trans. Nucl.Sci. 57 3314 (2011)
J C Bourgoin and M Zazoui Semiconduct. Sci. Technol. 17 453 (2002)
M Hadrami, L Roubi, M Zazoui and J C Bourgoin Solar Energy Mater. Solar Cells 90 1486 (2006)
H Mazouz, P O Logerais, A Belghachi, O Riou, F Delaleux and J F Durastanti Int. J. Hydrog. Energy 40 13857 (2015)
AF Meftah, N Sengouga, AM Meftah and S Khelifi Renew. Energy 34 2426 (2009)
AF Meftah, N Sengouga, A Belghachi and AM Meftah J. Phys. Condens. Matter 21 215802 (2009)
S Dabbabi, T B Nasr and N T Kamoun JOM 71 602 (2019)
W Laiadi, AF Meftah, N Sengouga, AM Meftah Superlattices Microstruct. 58 44 (2013)
A Aierken, L Fang, M Heini, Q M Zhang, Z H Li, X F Zhao and H Gao Solar Energy Mater. Solar Cells 185 36 (2018)
D Wang, B Chen, Z Wei, X Fang, J Tang, D Fang, A Aierken, X Wang, H Maliya and Q Guo J. Phys. Chem. Solids 132 26 (2019)
G Hongliang, S Linfeng, S Qiang, Z Qiming, W Yiyong, X Jingdong, G Bin and Z Yanqing Solar Energy Mater. Solar Cells 191 399 (2019)
F Lang, M Jost, J Bundesmann, A Denker, S Albrecht, G Landi and N H Nickel Energy Environ. Sci. 12 1634 (2019)
F D Auret, A Wilson, S Goodman, G Myburg and W Meyer Nuclear Instrum. Methods Phys. Res. Sect. B: Beam Interact. Mater. Atoms 90 387 (1994)
J Becker, Y Kuo and Y Zhang IEEE 40th Photovoltaic Specialist Conference (PVSC) 1839 (2014)
M Kurata Numerical analysis for semiconductor devices Lexington Books (1982)
W Shockley and T J W Read Phys. Rev. 87 835 (1952)
B Li, X Xiang, Z You, Y Xu, X Fei and X Liao Solar Energy Mater. Solar Cells 44 63 (1996)
AF Meftah, AM Meftah, N Sengouga and S Khelifi Energy Convers. Manag. 51 1676 (2010)
D Wurfel Peter Physics of solar cells : from principles to new concepts Weinheim : Wiley-VCH (2005)
M Zeman, J Van Den Heuvel, M Kroon and J Willemen Amorphous semiconductor analysis (asa) user’s manual Delft University of Technology p. 2 (1999)
S M Khanna, C Rejeb, A Jorio, M Parenteau and C Carlone and J W Gerdes IEEE Trans. Nucl. Sci. 40 1350 (1993)
G M Martin, A Mitonneau and A Mircea Electron. Lett. 13 191 (1977)
S Tsaur, A Milnes, R Sahai and D Feucht Proceedings of the fourth international symposium on GaAs and related compounds conference Series 17 156 (1972)
M Mbarki, G Sun and J C Bourgoin Semiconduct. Sci. Technol. 19 1081 (2004)
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Laiadi, W., Meftah, A., Meftah, A. et al. Numerical simulation of the electron traps effect created by neutron irradiation on \(p^+-n-n^+\) GaAs solar cell performance. Indian J Phys 95, 1871–1878 (2021). https://doi.org/10.1007/s12648-020-01864-7
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DOI: https://doi.org/10.1007/s12648-020-01864-7