Abstract
In this paper, we investigate the dielectric response of binary disordered systems, which are widely modelled by random resistor–capacitor networks (RRCN). Our results show the existence of a scaling law connecting the standard deviation of conductivity to the network size and capacitors proportion. In addition, we have studied the effect of using lossy capacitors on the dielectric response of RRCN. We found that lossy capacitors may introduce substantial effects of the dielectric loss, especially at low frequencies.
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Acknowledgements
This work was supported by the Algerian Ministry of Higher Education and Scientific Research. Authors would like to thank the Directorate General for Scientific Research and Technology Development (DG-RSDT) for providing USTO-MB University with a high-performance computing facility (IBN BAJA). A special thanks to Prof. L Metoseriu and Dr. J G Beppe for useful discussions.
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Benyahia, A., Bouamrane, R. Investigation of the dielectric response of binary disordered systems modelled as random resistor–capacitor networks. Indian J Phys 94, 1895–1900 (2020). https://doi.org/10.1007/s12648-019-01642-0
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DOI: https://doi.org/10.1007/s12648-019-01642-0