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Uphill diffusion of Si-interstitial during boron diffusion in silicon

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Abstract

The phenomenon of uphill diffusion has been considered because of its frequent appearance in multicomponent systems. Several studies have been carried out to recommend the treatment for uphill diffusion and it is found that the diffusion flux of any component coupled with its partner species is the cause of uphill diffusion. In this paper, a new diffusion equation system based on irreversible thermodynamics theory is presented. With the system, uphill diffusion in ternary systems in silicon (simultaneous diffusion of boron, Si-interstitial and vacancy in silicon) can be treated.

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Authors and Affiliations

  1. Department of Physics, Hanoi University of Mining and Geology, Hanoi, Vietnam

    Vu Ba Dung

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  1. Vu Ba Dung
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Correspondence to Vu Ba Dung.

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Dung, V.B. Uphill diffusion of Si-interstitial during boron diffusion in silicon. Indian J Phys 91, 1233–1236 (2017). https://doi.org/10.1007/s12648-017-1024-0

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  • DOI: https://doi.org/10.1007/s12648-017-1024-0

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