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Effect of built-in-polarization field on relaxation time and mean free path of phonons in InxGa1-xN/GaN quantum well

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Abstract

The built-in-polarization field at the interface of InxGa1-xN/GaN quantum well enhances the elastic constant, phonon velocity and Debye temperature of InxGa1-xN alloy and their respective bowing constants. As a result, the phonon scattering processes in InxGa1-xN are modified. The combined phonon relaxation time and phonon mean free path has been computed for with and without built-in-polarization field for different indium (In) contents at room temperature. Our result shows that the built-in-polarization field suppresses the scattering mechanisms and enhances the phonon relaxation time and mean free path. The result is used to determine the effect of built-in-polarization field on electrical and thermal properties of InxGa1-xN.

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Acknowledgments

V. G thanks University Grant Commission, New Delhi, India for providing financial support to carry out research work at National Institute of Technology, Raipur, India.

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  1. Department of Physics, National Institute of Technology, Raipur, 492010, (Chhattisgarh), India

    V. Gedam, A. Pansari & B. K. Sahoo

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  1. V. Gedam
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  2. A. Pansari
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  3. B. K. Sahoo
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Correspondence to B. K. Sahoo.

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Gedam, V., Pansari, A. & Sahoo, B.K. Effect of built-in-polarization field on relaxation time and mean free path of phonons in InxGa1-xN/GaN quantum well. Indian J Phys 90, 991–997 (2016). https://doi.org/10.1007/s12648-016-0836-7

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