Abstract
We deposited the hafnium dioxide (HfO2) thin films on p-Si (100) substrates. The thin films were deposited with deposition time variations, viz 2, 4, 7 and 20 min using RF-sputtering technique. The thickness and refractive index of the films were measured using spectroscopic ellipsometer. The thicknesses of the films were measured to be 13.7, 21.9, 35.38 and 92.2 nm and refractive indices of 1.90, 1.93, 1.99 and 1.99, respectively, of the films deposited for 2, 4, 7 and 20 min deposition time. The crystal structures of the deposited HfO2 thin films were determined using XRD spectra and showed the monoclinic structure, confirmed with the ICDD card no 34-0104. Aluminum metallization was carried to form the Al/HfO2/p-Si MOS structures by using thermal evaporation system with electrode area of 12.56 × 10−4 cm2. Capacitance voltage and current voltage measurements were taken to know electrical behavior of these fabricated MOS structures. The electrical parameters such as dielectric constant, flat-band shift and interface trap density determined through CV measurement were 7.99, 0.11 V and 6.94 × 1011 eV−1 cm−2, respectively. The low leakage current density was obtained from IV measurement of fabricated MOS structure at 1.5 V is 4.85 × 10−10 Acm−2. Aforesaid properties explored the suitability of the fabricated HfO2 high-k-based MOS capacitors for advanced CMOS technology.
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Acknowledgments
Authors are thankful to CEN, IITB for providing necessary fabrication and characterization facilities under INUP scheme. One of the authors, A. G. Khairnar, is thankful to Council of Scientific and Industrial Research (CSIR), New Delhi, India, for providing Senior Research Fellowship for carrying out this work [File No. 09/728(0029)/2012-EMR-I]. Nanomission DST [SR/NM/NS-1068/2011(G)] for financial support.
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Khairnar, A.G., Patil, L.S., Salunke, R.S. et al. Electrical properties of HfO2 high-k thin-film MOS capacitors for advanced CMOS technology. Indian J Phys 89, 1177–1181 (2015). https://doi.org/10.1007/s12648-015-0691-y
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DOI: https://doi.org/10.1007/s12648-015-0691-y