Indian Journal of Physics

, Volume 84, Issue 6, pp 693–697 | Cite as

Field effect transistor fabricated from polyaniline-polyvinyl alcohol nanocomposite

  • J. Bhadra
  • D. SarkarEmail author


The composite polyaniline-polyvinyl alcohol (PANI-PVA) is chemically synthesized by dispersion polymerization. The composite films have conductivity of the order of 10−2 S/cm. Field effect transistors (FET) on transparent sheet for two distinct PANI-PVA ratio of 1:9 and 1:11 are constructed and characterized. The steady state and transient behaviour of the device was investigated. These characteristics exhibit a p-type field-effect behaviour. The mobility, threshold voltage and transconductance of the device are also calculated.


Conducting polymer polyaniline field effect transistor 


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  1. [1]
    T Osaka, S Ogano, K Naoi and N Oyama J. Electrochem Soc. 136 306 (1989)CrossRefGoogle Scholar
  2. [2]
    T Kobayashi, H Yoneyama, and H Tamura J. Electroanal Chem. 161 419 (1984)CrossRefGoogle Scholar
  3. [3]
    C K Chiang, C R Fincher Jr., Y W Park, A J Heeger, H Shirakawa, E J Louis, S C Gau and A G MacDiarmid Phys. Rev. Lett. 39 1098 (1977)CrossRefADSGoogle Scholar
  4. [4]
    F Garnier, R Hajlaoui, A Yassar and P Srivastava Science 256 1684 (1994)CrossRefADSGoogle Scholar
  5. [5]
    G H Gelinck, T C T Geuns and D M de Leeuw Appl. Phys. Lett. 77 1487 (2000)CrossRefADSGoogle Scholar
  6. [6]
    H Sirringhaus, T Kawase, R H Friend, T Shimoda, M Inbasekaran, W Wu and E P Woo Science 290 2123 (2000)CrossRefADSGoogle Scholar
  7. [7]
    M Halik, H Klauk, U Zschieschang, T Kriem, G Schmid and W Radik Appl. Phys. Lett. 81 289 (2002)CrossRefADSGoogle Scholar
  8. [8]
    J Bhadra J and D Sarkar Materials Letters 63 69 (2009)CrossRefGoogle Scholar
  9. [9]
    Y Yang and M Wan J. Mater. Chem. 56 p 529 (2006)Google Scholar
  10. [10]
    J G Park, G T Kim, V Krstic, S H Lee, B Kim S Roth, M Burghard and Y W Park Synth. Met. 119 469 (2001)CrossRefGoogle Scholar
  11. [11]
    S M Sze Physics of Semiconductor Devices (New York: Willy) (1981)Google Scholar
  12. [12]
    Y Sun, Y Liu and D Zhu J. Mater. Chem. Chem. 15 53 (2005)CrossRefGoogle Scholar
  13. [13]
    N J Pinto, A T Johnson (Jr), A G MacDiarmid, C H Mueller, N Theofylaktos, D C Robinson and F A Miranda Appl. Phys. Lett. 83 Ch 20 p 4244 (2003)CrossRefADSGoogle Scholar
  14. [14]
    H Liu, C H Reccius and H G Craigead Appl. Phys. Lett. 87 Ch 20 p 253106 (2003)CrossRefADSGoogle Scholar
  15. [15]
    C T Kuo and W H Chiou Synth. Met 88 23 (1997)CrossRefGoogle Scholar

Copyright information

© Indian Association for the Cultivation of Science 2010

Authors and Affiliations

  1. 1.Department of PhysicsGauhati UniversityGuwahatiIndia

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