Abstract
n-Type indium antimonide-Au hybrid macro-structure was successfully fabricated on p-GaAs substrate by a simple and economic flash evaporation technique. The elemental composition of the prepared InSb film was confirmed by energy dispersive X-ray spectroscopy microanalysis (EDX). The surface topography and crystal structure of the InSb film was characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. The magnetoresistance of the prepared hybrid macro-structure was measured and discussed in terms of the model of current redistribution.
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Terra, F.S., Higazy, A.A., Mahmoud, G.M. et al. (InSb/GaAs)-Au hybrid macro-structure prepared by flash evaporation. Indian J Phys 84, 265–277 (2010). https://doi.org/10.1007/s12648-010-0012-4
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DOI: https://doi.org/10.1007/s12648-010-0012-4