Abstract
We study the effect of bond angle and dihedral angle disorder on the diamagnetic susceptibility (χ) of a model amorphous semiconductor by adopting a linear combination of hybrids formalism. We have constructed orthormal basis states for the disorder network by introducing distortion in bond angles and dihedral angles. We have used the disorder basis states in the expression for χ and adopted suitable averaging techniques to obtain χ in terms of disorder parameters, which shows interesting results.
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Tripathy, P.C., Acharya, R.N. & Sahu, T. Effect of bond angle and dihedral angle disorder on diamagnetic susceptibility of tetrahedrally coordinated amorphous semiconductors. Indian J Phys 83, 511–515 (2009). https://doi.org/10.1007/s12648-009-0011-5
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DOI: https://doi.org/10.1007/s12648-009-0011-5