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Analytical Modeling for Electrical Characteristics of Source Pocket-Based Hetero Dielectric Double-Gate TFETs

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Abstract

In this article, a physics-based 2-D analytical model for electrical characteristics such as electric field, surface potential, and drain current of source pocket hetero-dielectric double-gate tunnel FET (SP-HD-DG-TFET) is proposed to simultaneously increase the drain current and immune the subthreshold swing (SS). The presented structure of the device consists of a source pocket of highly n+-doped Silicon with a horizontally stacked gate-oxide structure of HfO2/SiO2. Poisson’s equation has been discussed in the channel region by applying the parabolic approximation technique and appropriate boundary conditions. The expression of the electric field has been developed using the channel potential model. Analytically integration of band-to-band tunneling generation rate over the channel thickness yields the drain current expression. The device’s performances of SP-HD-DG-TFETs using the suggested model have been found better in terms of V-I characteristics, ION/IOFF, and SS as compared with hetero-diegetic double gate TFET (HD-DG-TFET), high-k TFET and conventional DG-TFET. The suggested model’s output has been compared to simulation results produced by the SILVACO ATLAS TCAD tool and found to be in good accordance between them.

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Acknowledgements

We thank the New Research Sholar VLSI Lab of ECED, MNNIT Allahabad, Prayagraj, India, for providing resources and Dr. Abhinaw Gupta for the fruitful suggestion and discussion.

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This work was not financially supported.

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Authors and Affiliations

  1. Electronics and Communication Engineering Department, Motilal Nehru National Institute of Technology Allahabad, Prayagraj, 211004, India

    Kavindra Kumar Kavi, Shweta Tripathi & R. A. Mishra

  2. Electronics and Communication Engineering Department, Indian Institute of Information Technology Bhagalpur, Bhagalpur, 813210, India

    Sanjay Kumar

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  1. Kavindra Kumar Kavi
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  2. Shweta Tripathi
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  3. R. A. Mishra
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Contributions

All authors participated in the writing of the manuscript for significant intellectual content and gave their final approval of the version to be published. Kavindra Kumar Kavi has done the simulations and modelling work which made significant contributions to the conception and design, data acquisition, data analysis, and interpretation. Shweta Tripathi prepared all the figures 1-11. R.A Mishra has made sufficient contributions to the work to accept accountability for relevant portions of the content. Sanjay Kumar wrote the entire mathematical modelling equations in throughout the manuscript. All authors reviewed and approved the final manuscript.

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Correspondence to Kavindra Kumar Kavi.

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Kavi, K.K., Tripathi, S., Mishra, R.A. et al. Analytical Modeling for Electrical Characteristics of Source Pocket-Based Hetero Dielectric Double-Gate TFETs. Silicon 16, 1273–1282 (2024). https://doi.org/10.1007/s12633-023-02754-3

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