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Fabrication and Characterization of CuInGaSe Thin Films Deposited on Silicon and Quartz Substrates Using One-Step Sputtering

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Abstract

The present study showcases a one-step deposition technique for producing copper indium gallium selenide (CIGS) thin-films on different substrates, employing RF magnetron sputtering at two substrate temperatures. The primary objective is to analyze how substrate material and substrate temperature influence the morphology, electrical, and optical characteristics of the resultant CIGS thin-films. A one-step RF sputtering deposition process was employed to deposit thin-films of CIGS using a quaternary compound target with the chemical formula CuIn0.7Ga0.3Se2. The thin-films were deposited on different substrates, and the substrate temperatures were varied during the process. Different characterization techniques were employed to analyze the as-deposited CIGS thin-films in response to the variation in substrate temperature. The study demonstrate that the crystallinity of the CIGS thin-films increased at higher substrate temperature, and Raman spectra revealed the formation of chalcopyrite phase of CIGS thin-films. The measured bandgap energy value varies within the range of 1.01 to 1.13 eV and closely matched the theoretical energy bandgap of the target at a specific Ga/In + Ga (GGI) value of 0.3. Hall measurement confirmed that the compound is a p-type material. The carrier concentration decreases but the carrier mobility and resistivity increase at higher substrate temperatures. The outcomes revealed that the high-quality CIGS thin-films are formed on the quartz substrate at higher substrate temperature. These findings highlight the importance of substrate’s choice and temperature control in optimizing the opto-electronic characteristics of CIGS thin-films for potential applications in photovoltaic and other opto-electronic devices.

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Acknowledgements

We acknowledge and are thankful for the Lab facilities provided by the Malaviya National Institute of Technology, Jaipur (Rajasthan)-INDIA. We are grateful for the necessary funds provided by the SEED division, Department of Science and Technology, (New Delhi)-INDIA, to carry out the research.

Funding

This work was supported by the SEED division, Department of Science and Technology (New Delhi)-INDIA, sanction no. SP/YO/378/2018. Abhinav Bhatnagar (first author) has received research support from SEED division, Department of Science and Technology (New Delhi)- INDIA.

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Authors and Affiliations

  1. Department of Electronics & Communication Engineering, Malaviya National Institute of Technology, Jaipur, Rajasthan, 302017, India

    Abhinav Bhatnagar & Vijay Janyani

  2. Materials Research Centre, Malaviya National Institute of Technology, Jaipur, Rajasthan, 302017, India

    Hitesh Kumar Sharma

  3. Department of Physics, Malaviya National Institute of Technology, Jaipur, Rajasthan, 302017, India

    Deepak Negi & Srinivasa Rao Nelamarri

Authors
  1. Abhinav Bhatnagar
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  2. Hitesh Kumar Sharma
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  3. Deepak Negi
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  4. Srinivasa Rao Nelamarri
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  5. Vijay Janyani
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Contributions

All authors significantly contributed to the research, formulation, and fabrication of the study. Theoretical analysis and process parameter optimization were carried out by Abhinav Bhatnagar, Srinivasa Rao Nelamarri, and Vijay Janyani. The fabrication and characterization were conducted by Abhinav Bhatnagar, Hitesh Kumar Sharma, and Deepak Negi. Abhinav Bhatnagar took the initiative in writing the initial draft of the manuscript, and the co-authors provided valuable feedback on earlier versions. The final manuscript underwent review and approval by all authors.

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Correspondence to Abhinav Bhatnagar.

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Bhatnagar, A., Sharma, H.K., Negi, D. et al. Fabrication and Characterization of CuInGaSe Thin Films Deposited on Silicon and Quartz Substrates Using One-Step Sputtering. Silicon 16, 1253–1263 (2024). https://doi.org/10.1007/s12633-023-02752-5

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