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Metal-Assisted Chemical Etching of Mesoporous Silicon - Optical Properties

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Abstract

In this research, a mesoporous silicon sample is fabricated by noble metal-assisted chemical etching that p-type silicon is used. The characteristics and morphology of the sample is examined by EDX and FESEM. The optical properties are investigated by PL, UV, Raman and FTIR spectroscopy. The purity of silicon is determined using EDX analysis. The size of pores is examined by FESEM and found to be in the range of 19 to 67 nm. PL in both pure and mesoporous silicon shows a peak at 727 nm wavelength equal 1.7 eV energy. UV reflectance and absorbance have a peak at 381 nm in mesoporous and 369 nm in pure silicon. PL and UV analysis are used to estimate the value of energy band for mesoporous silicon which was found to be 1.7 eV. Raman analysis is performed on pure and mesoporous silicon samples and the results of this experiment show a peak for both samples of silicon at the same wavelength of 519 cm−1, but revealed a higher intensity for mesoporous silicon than that of pure silicon. FTIR results indicate an absence of bonding between the silicon surface and the noble metal in mesoporous silicon, all observed peaks are attributed to the bonding between silicon and elements present in the surrounding air. The optical analysis together with the value of the energy band gap obtained for mesoporous silicon indicate that it could potentially be a suitable candidate for solar cells.

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Data Availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

References

  1. Canham LT (1990) Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Appl Phys Lett 57(10):1046–1048

    Article  ADS  CAS  Google Scholar 

  2. Meulenkamp E, Bressers P, Kelly J (1993) Visible chemiluminescence and electroluminescence of porous silicon. Appl Surf Sci 64(4):283–295

    Article  ADS  CAS  Google Scholar 

  3. Kelly MT, Bocarsly AB (1998) Mechanisms of photoluminescent quenching of oxidized porous silicon applications to chemical sensing. Coord Chem Rev 171:251–259

    Article  CAS  Google Scholar 

  4. Kiraly B, Yang S, Huang TJ (2013) Multifunctional porous silicon nanopillar arrays: antireflection, superhydrophobicity, photoluminescence, and surface-enhanced Raman scattering. Nanotechnology 24(24):245704

    Article  ADS  PubMed  PubMed Central  Google Scholar 

  5. Salcedo WJ, Fernandez FJR, Rubim JC (2004) Photoluminescence quenching effect on porous silicon films for gas sensors application. Spectrochim Acta Part A Mol Biomol Spectrosc 60(5):1065–1070

    Article  ADS  Google Scholar 

  6. Stewart MP, Buriak JM (2000) Chemical and biological applications of porous silicon technology. Adv Mater 12(12):859–869

    Article  CAS  Google Scholar 

  7. Dimova-Malinovska D, Sendova-Vassileva M, Tzenov N, Kamenova M (1997) Preparation of thin porous silicon layers by stain etching. Thin Solid Films 297(1–2):9–12

    Article  ADS  CAS  Google Scholar 

  8. Canham L (2014) Handbook of porous silicon. Springer International Publishing Berlin, Germany

  9. Huo C, Wang J, Fu H, Li X, Yang Y, Wang H, Mateen A, Farid G, Peng KQ (2020) Metal-assisted chemical etching of silicon in oxidizing HF solutions: origin, mechanism, development, and black silicon solar cell application. Adv Funct Mater 30(52):2005744

  10. Huang Z, Geyer N, Werner P, De Boor J, Gösele U (2011) Metal-assisted chemical etching of silicon: a review: in memory of Prof. Ulrich Gösele Adv Mater 23(2):285–308

    Article  CAS  PubMed  Google Scholar 

  11. Kashyap V, Chaudhary N, Goyal N, Saxena K (2022) Fabrication and characterization of silicon nanowires with MACE method to influence the optical properties. Mater Today: Proc 49:3409–3413

    CAS  Google Scholar 

  12. Sahu G (2021) Comparison study of optical properties of Si nanostructures: Ion implantation and MACE. AIP Conference Proceedings. AIP Publishing LLC

    Google Scholar 

  13. Yae S, Morii Y, Fukumuro N, Matsuda H (2012) Catalytic activity of noble metals for metal-assisted chemical etching of silicon. Nanoscale Res Lett 7(1):352

    Article  ADS  PubMed  PubMed Central  Google Scholar 

  14. Patzig S, Roewer G, Kroke E (2007) NOHSO4/HF–a novel etching system for crystalline silicon. Z für Naturforschung B 62(11):1411–1421

    Article  CAS  Google Scholar 

  15. Li X, Bohn P (2000) Metal-assisted chemical etching in HF/H 2 O 2 produces porous silicon. Appl Phys Lett 77(16):2572–2574

    Article  ADS  CAS  Google Scholar 

  16. Franz M, Junghans R, Schmitt P, Szeghalmi A, Schulz SE (2020) Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with au, pd, pt, Cu, and ir. Beilstein J Nanotechnol 11(1):1439–1449

    Article  CAS  PubMed  PubMed Central  Google Scholar 

  17. Koval V, Yakymenko Y, Ivashchuk A, Dusheyko M, Masalskyi O, Koliada M, Kulish D (2019) Metal-assisted chemical etching of silicon for photovoltaic application. In IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO). 2019. IEEE

  18. Lajvardi M, Eshghi H, Ghazi M, Izadifard M, Goodarzi A (2015) Structural and optical properties of silicon nanowires synthesized by Ag-assisted chemical etching. Mater Sci Semiconduct Process 40:556–563

    Article  CAS  Google Scholar 

  19. Ashrafabadi S, Eshghi H (2018) Synthesis and characterization of n-type lightly doped mesoporous silicon nanowires through 1-MACE, influence of etching solution temperature. J Mater Sci: Mater Electron 29(8):6470–6476

    CAS  Google Scholar 

  20. Youssef G, El-Nahass M, El-Zaiat S, Farag M (2016) Investigation of size and band gap distributions of Si nanoparticles from morphology and optical properties of porous silicon layers formed on a textured N + P silicon solar cell. Int J Semicond Sci Technol 6:1–12

    CAS  Google Scholar 

  21. Landi S, Segundo IR, Freitas E, Vasilevskiy M, Carneiro J, Tavares CJ (2022) Use and misuse of the Kubelka-Munk function to obtain the band gap energy from diffuse reflectance measurements. Solid State Commun 341:114573

    Article  CAS  Google Scholar 

  22. Venkatesan R, Mayandi J, Pearce JM, Venkatachalapathy V (2019) Influence of metal assisted chemical etching time period on mesoporous structure in as-cut upgraded metallurgical grade silicon for solar cell application. J Mater Sci: Mater Electron 30:8676–8685

    CAS  Google Scholar 

  23. Kayabasi E, Kurt H, Celik E (2017) Determination of micro sized texturing and nano sized etching procedure to enhance optical properties of n-type single crystalline silicon wafer. J Mater Sci: Mater Electron 28(18):14085–14090

    CAS  Google Scholar 

  24. Naddaf M, Hamadeh H (2009) Visible luminescence in photo-electrochemically etched p-type porous silicon: effect of illumination wavelength. Mater Sci Eng: C 29(7):2092–2098

    Article  CAS  Google Scholar 

  25. Lam NTN, Giang NT, Kien PT, Dung ND, Ha NN (2019) N-type silicon nanowires prepared by silver metal-assisted chemical etching: fabrication and optical properties. Mater Sci Semiconduct Process 90:198–204

    Article  Google Scholar 

  26. Pham V-H, Hanh NTH, Tam PD (2016) Tunable luminescence of nanoporous silicon via electrochemical etching parameters. Optik 127(7):3513–3516

    Article  ADS  CAS  Google Scholar 

  27. Gardelis S, Nassiopoulou A, Mahdouani M, Bourguiga R, Jaziri S (2009) Enhancement and red shift of photoluminescence (PL) of fresh porous Si under prolonged laser irradiation or ageing: Role of surface vibration modes. Phys E: Low-Dimens Syst Nanostructures 41(6):986–989

    Article  ADS  CAS  Google Scholar 

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Acknowledgements

The authors would like to acknowledge the financial support from the vice presidency for research and technology of Shahid Beheshti University.

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The financial support from the vice presidency for research and technology of Shahid Beheshti University.

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M.H. and P.A. conceived the manuscript. P.A. analyzed all data utilized in this paper and synthesized the nanostructure under the guidance of M.H. All graphs and schematic diagrams in the article were plotted and designed by P.A. All authors discussed the results and assisted during manuscript preparation.

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Correspondence to Parnian Alasti or Mahboubeh Houshiar.

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Alasti, P., Houshiar, M. Metal-Assisted Chemical Etching of Mesoporous Silicon - Optical Properties. Silicon 16, 1265–1272 (2024). https://doi.org/10.1007/s12633-023-02745-4

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