Abstract
In this paper, an improved 4H-SiC metal semiconductor field effect transistor with a partially undoped region and tortuous channel (URTC MESFET) is proposed. Based on the drain side-recessed p-buffer structure (DS-RPB MESFET), the URTC MESFET introduces a recessed region in the gate-source side channel and an undoped region in the gate-drain side channel, also, the recessed regions in the p-buffer layer are optimized. Simulation results demonstrate that the URTC MESFET achieves a 63% increase in breakdown voltage compared to the double recessed structure (DR MESFET), with the saturation current increasing from 458.13 mA/mm to 485.05 mA/mm. Furthermore, the maximum output power improves from 4.31 W/mm to 7.71 W/mm, representing a 79% enhancement. Additionally, the cut-off frequency increases from 22.4 GHz to 23.29 GHz. The power added efficiency increases from 56% in the DR structure to 67%. Therefore, the URTC structure exhibits significant improvements in DC characteristics, AC characteristics, and power added efficiency, showing great potential for applications in high-power, RF, and high-efficiency domains.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
Data Availability
Data and materials are presented in the manuscript.
References
Trew RJ (2000) Wide bandgap semiconductor transistors for microwave power amplifiers. IEEE Microwave Mag 1(1):46–54
Trew RJ (1997) The operation of microwave power amplifiers fabricated from wide bandgap semiconductors[C]//1997 IEEE MTT-S International Microwave Symposium Digest. IEEE 1:45–48
Milligan J W, Sheppard S, Pribble W et al (2007) SiC and GaN wide bandgap device technology overview[C]//2007 IEEE Radar Conference. IEEE 960–964
Trew RJ (2002) SiC and GaN transistors-is there one winner for microwave power applications? Proc IEEE 90(6):1032–1047
Palmour JW, Milligan JW, Henning J, Allen ST, Ward A, Parikh P, Smith RP, Saxler A, Moore M, & Wu, Y (2004) SiC and GaN based transistor and circuit advances
Zhu CL et al (2006) Improved performance of SiC MESFETs using double-recessed structure. Microelectron Eng 83(1):92–95
Aminbeidokhti A, Orouji AA (2011) A novel 4H–SiC MESFET with modified channel depletion region for high power and high frequency applications. Physica E 44(3):708–713
Jia H, Ma P, Luo Y et al (2016) A novel 4H-SiC MESFET with double upper gate and recessed p-buffer. Superlattices Microstruct 97:346–352
Ramezani Z, Orouji AA, Rahimian M (2015) High-performance SOI MESFET with modified depletion region using a triple recessed gate for RF applications. Mater Sci Semicond Process 30:75–84
Orouji AA, Aminbeidokhti A (2011) A novel double-recessed 4H-SiC MESFET with partly undoped space region. Superlattices Microstruct 50(6):680–690
Jia H, Li T, Tong Y et al (2020) A novel 4H-SiC MESFET with symmetrical lightly doped drain for high voltage and high power applications. Mater Sci Semicond Process 105:104707
Jia H, Zhang Y, Zhu S et al (2022) A novel 4H–SiC MESFET with P-type doping zone and recessed buffer layer. Mater Sci Semicond Process 144:106615
Jia H, Zhang H, Luo Y et al (2015) Improved multi-recessed 4H–SiC MESFETs with double-recessed p-buffer layer. Mater Sci Semicond Process 40:650–654
Orouji AA, Roustaie Z, Ramezani Z (2016) Novel 4H-SiC MESFET with modified depletion region by dual well for high-current applications. J Comput Electron 15(3):1077–1084
Zhu S, Jia H, Yang Y (2023) Improved multi-recessed p-buffer 4H–SiC metal-semiconductor field-effect transistor with high power added efficiency. Curr Appl Phys 49:100–108
Zhang J, Luo X, Li Z et al (2007) Improved double-recessed 4H-SiC MESFETs structure with recessed source/drain drift region. Microelectron Eng 84(12):2888–2891
Razavi SM, Orouji AA, Hosseini SE (2012) Recessed p-buffer layer SiC MESFET: A novel device for improving DC and RF characteristics. Mater Sci Semicond Process 15(5):516–521
Sentaurus Device User Guide, Version L-2016.03, Synopsys Inc., Mountain View, CA, USA
Angilent Technologies, ADS Documentation, User Manuals,Version ADS2019, Angilent Technologies, Santa Clara, CA, USA, 2019
Song K, Chai CC, Yang YT et al (2012) Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal semiconductor field-effect transistors. Chin Phys B 21(1):017202
Gang C, YuFei Q, Song B et al (2010) Microwave power and simulation of S-band SiC MESFETs. Solid-State Electron 54(4):353–356
Deng XC, Feng Z, Zhang B et al (2009) Effects of a multi-recessed gate in microwave 4H-SiC power MESFETs[C]//2009 International Conference on Communications, Circuits and Systems. IEEE 645–647
Jia H, Zhang Y, Wang H et al (2022) Improved 4H–SiC MESFET with bulgy channel. Micro Nanostructures 166:207222
Zhu CL, Zhao P, Xia JH (2006) Characterization of SiC MESFETs with narrow channel layer. Microelectron Eng 83(1):72–74
Razavi SM (2021) An Improved 4H-SiCMESFET with Un-Doped and Recessed Area under the Gate for High Power Applications. Silicon 13:3889–3897
Jia H, Yang Z, Wu Q et al (2016) Improved double-recessed P-buffer 4H-SiC MESFETs with partial heavy doped channel. Mater Sci Semicond Process 56:213–216
Jia H, Wang X, Zhang Y et al (2023) Improved 4H–SiC MESFET with recessed and multi-concentration doped channel. Micro and Nanostructures 174:207466
Zhang X, Wang M (2018) Simulation of high power step-buffer 4H silicon carbide metal semiconductor field effect transistor[C]//2018 International Conference on Electronics Technology (ICET). IEEE 1–5
Jia H, Luo Y, Zhang H et al (2017) A novel 4H-SiC MESFET with serpentine channel for high power and high frequency applications. Superlattices Microstruct 101:315–322
Zhu S, Jia H, Dong M et al (2022) Improved 4H-SiC Metal-Semiconductor Field-Effect Transistors with Double-Symmetric-Step Buried Oxide Layer for High-Energy-Efficiency Applications. J Electron Mater 51(8):4348–4356
Acknowledgements
This work was supported by the National Natural Science Foundation of China (NSFC) under Grant No. 61671343.
Funding
The work has received financial support from National Natural Science Foundation of China (NSFC).
Author information
Authors and Affiliations
Contributions
Hujun Jia: Project administration;
Xiaojie Wang: Data curation, Writing-Original draft preparation, Software and Validation;
Yangyi Shen: Writing-Reviewing and Editing;
Linna Zhao: Validation.
Qiyu Su: Formal analysis;
Yintang Yang: Supervision.
Corresponding author
Ethics declarations
Ethics Approval
We have no ethical conflict.
Consent to Participate
All authors give their consent to participate in this manuscript.
Consent for Publication
Consent was obtained from all the authors for the publication of this manuscript.
Research Involving Human Participants and/or Animals
Not applicable.
Informed Consent
Not applicable.
Conflicts of Interest/Competing Interests
The authors declare that there is no conflict of interest reported in this paper.
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
About this article
Cite this article
Jia, H., Wang, X., Shen, Y. et al. Improved 4H-SiC MESFET with Partially Undoped Region and Tortuous Channel. Silicon 15, 7725–7732 (2023). https://doi.org/10.1007/s12633-023-02623-z
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s12633-023-02623-z