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A Detailed Theoretical Analysis of TOPCon/TOPCore Solar Cells Based on p-type Wafers and Prognosticating the Device Performance on Thinner Wafers and Different Working Temperatures

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Abstract

In the present work, Automat FOR Simulation of HETerostructures (AFORS-HET v2.5) simulation software was used to investigate the performance of p-type tunnel oxide passivated contact (p-TOPCon) solar cells. Firstly, the influence of SiOx thickness on the device performance at different rear surface recombination velocity (SRV) was studied thoroughly; the same was followed by the incorporation of pinholes at different oxide thickness to realize the impact of pinhole density (Dph) on the charge carrier transport mechanisms through the ultra-thin SiOx tunneling layer. Next, the doping concentration of p+ poly-Si layer was varied to reveal its impact on the device output and it was noticed that presence of pinholes might facilitate the transformation of charge carriers through ultra-thin SiOx tunneling layer even at relatively lower poly-Si doping concentration. Furthermore, the consequence of wafer thickness at different wafer lifetime and at different front SRV on the performance of p-TOPCon solar cells was studied thoroughly. A relative analysis on the device performance in between the conventional TOPCon and TOPCore (TOPCon with p-type wafer and n+ poly-Si as rear emitter) solar cell architecture based onto p-type base substrate was conducted. Eventually, an in-depth comparative analysis of the thermal stability among TOPCon, TOPCore and baseline BSF (back surface field) solar cells was carried out for both thicker and thinner wafers. The role of pinholes on the thermal stability of the devices was also pinpointed and it was yielded that our optimized device parameters might enable the best possible thermal stability along with higher power output.

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Data Availability

The datasets generated during the simulation study and analyses are not publicly available before publication of the manuscript as those data sets has been used to prepare the manuscript and available in the manuscript itself.

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Acknowledgements

The present work has been carried out in DST-IIEST Solar PV Hub and supported by Department of Science and Technology (DST/TMD/SERI/HUB/2(G), Govt. of India (GOI). One of the authors, Dibyendu Kumar Ghosh is thankful to Ministry of New and Renewable Energy (MNRE), India for providing him the research fellowship.

Funding

The work was supported by Department of Science and Technology, DST/TMD/SERI/HUB/2(G), Govt. of India (GoI). One of the authors Dibyendu Kumar Ghosh is acknowledging Ministry of New and Renewable Energy (MNRE), India for their financial support for carrying out his doctoral studies.

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Authors and Affiliations

  1. School of Advanced Materials, Green Energy and Sensor Systems (SAMGESS), Indian Institute of Engineering Science and Technology (IIEST), Shibpur, Howrah, India

    Dibyendu Kumar Ghosh, Shiladitya Acharyya, Gourab Das & Sumita Mukhopadhyay

  2. Department of Electronics and Communication Engineering, Academy of Technology (AOT), Adisaptagram, Hooghly, India

    Sukanta Bose

  3. Department of Electrical Engineering, Indian Institute of Engineering Science and Technology (IIEST), Shibpur, Howrah, India

    Anindita Sengupta

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  1. Dibyendu Kumar Ghosh
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Contributions

Dibyendu Kumar Ghosh (Simulation and Analysis, Preparing Manuscript), Shiladitya Acharyya (Analysis), Sukanta Bose (Preparing Manuscript), Gourab Das (Conceptualizing and Proof), Sumita Mukhopadhyay (Supervising), Anindita Sengupta (Mentor). All authors read and approved the final manuscript.

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Correspondence to Gourab Das.

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Ghosh, D.K., Acharyya, S., Bose, S. et al. A Detailed Theoretical Analysis of TOPCon/TOPCore Solar Cells Based on p-type Wafers and Prognosticating the Device Performance on Thinner Wafers and Different Working Temperatures. Silicon 15, 7593–7607 (2023). https://doi.org/10.1007/s12633-023-02606-0

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