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Novel Simulation and Efficiency Enhancement of Eco-friendly Cu2FeSnS4/c-Silicon Tandem Solar Device

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Abstract

This work exhibits a new theoretical approach about a 2T Tandem solar cell made of two cells: CFTS/Si. For maximum benefit, careful consideration must be given to the selection and performance enhancement of both cells. In order to achieve good results, the bottom and top cells are independently analyzed and optimized to set the best structure for each one of them. Two terminal tandem solar cells are very effective in converting energy. However, one of the main limitations of the 2T terminals model is the circulation of the lowest current density since it is similar to an electric series connection between the sub cells. In this paper we tried to define a current matching point with a good current density. The two SC structures (Top and Bottom) under investigation generated impressive performances of about 24.06% and 22.04%, respectively. The evaluation of the tandem Cu2FeSnS4-on-c-Si solar cell produced the following simulation results: Voc= 1.81 V, Jsc= 22.22 mA/cm2, and Fill Factor=87.61% with a conversion efficiency of 35.23 %. The results demonstrate a thorough analysis of both prospective single-cell performance parameters and tandem device architecture.

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Abbreviations

μn (cm2/Vs):

Electron mobility

μp (cm2/Vs):

Hole mobility

ND (cm−3):

Shallow uniform donor density

NA (cm−3):

Shallow uniform acceptor density

Nt (cm−3):

Defect density

φ(eV):

Work function of the metal contact

Se(cm/s):

Velocity of recombination in the surface for electrons

Sh(cm/s):

Surface recombination velocity for holes

\({V}_{th}=\frac{KT}{q}\) :

Thermal voltage

A (Taken as 2):

Ideality factor

λ (nm):

Wavelength

α (cm-1):

Absorption coefficient

Voc(V):

Open circuit voltage

Jsc(mA/cm2):

Short circuit current density

Eg(eV):

Band gap

χ (eV):

Electron affinity

εr :

Dielectric permittivity (relative)

Nc (cm−3):

CB effective density of states

Nv (cm−3):

VB effective density of states

K :

Boltzmann constant

q :

Elementary charge

T:

Temperature at 300K,

Eg(eV):

Band gap

Cu2FeSnS4 :

Copper Iron Tin Sulfur

CdS:

Cadmium Sulfide

ITO :

Indium Tin Oxide

Si:

Silicon

BSF:

back surface field

PCE(ɳ(%)):

Power Conversion Efficiency

FF(%):

Fill Factor

SC :

Solar Cell

PV:

Photovoltaic

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Acknowledgments

Authors’ acknowledgments are dedicated to Mr. Marc Burgelman for assuring the availability of SCAPS-1D software.

Author information

Authors and Affiliations

  1. Research Laboratory in Physics and Sciences for Engineers (LRPSI), Polydisciplinary Faculty, Sultan Moulay Slimane University, Beni Mellal, Morocco

    Mohamed Al-Hattab & L’houcine Moudou

  2. MESE/Lab PETI, Polydisciplinary Faculty of Ouarzazate, Ibnou Zohr University, Agadir, Morocco

    Essaadia Oublal & Mustapha Sahal

  3. Lphe modeling and simulation Faculty of Science, Mohammed V university in Rabat, Rabat, Morocco

    Younes Chrafih & Khalid Rahmani

  4. Energy and Materials Engineering Laboratory “LGEM”, Faculty of Sciences and Technics, Sultan Moulay Slimane University, BP 523, 23000, Beni Mellal, Morocco

    Omar Bajjou

  5. Department of Physics, Ecole Normale Supérieure (ENS), Mohammed V University, Rabat, Morocco

    Khalid Rahmani

Authors
  1. Mohamed Al-Hattab
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  2. Essaadia Oublal
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  3. Younes Chrafih
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  4. L’houcine Moudou
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  5. Omar Bajjou
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  6. Mustapha Sahal
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  7. Khalid Rahmani
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Contributions

Mohamed Al-Hattab, Essaadia Oublal ,L'houcine Moudou and Younes Chrafih, analyze the device structure, simulation study and drafted the manuscript. Omar Bajjou, Mustapha Sahal and Khalid Rahmani updated the draft file of manuscript.

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Correspondence to Mohamed Al-Hattab.

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Al-Hattab, M., Oublal, E., Chrafih, Y. et al. Novel Simulation and Efficiency Enhancement of Eco-friendly Cu2FeSnS4/c-Silicon Tandem Solar Device. Silicon 15, 7311–7319 (2023). https://doi.org/10.1007/s12633-023-02582-5

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