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Implementation of Band Gap and Gate Oxide Engineering to Improve the Electrical Performance of SiGe/InAs Charged Plasma-Based Junctionless-TFET

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A Correction to this article was published on 24 September 2022

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Abstract

This paper reports on a charged plasma-based adjustable bandgap source/channel (So/Ch) interface using a new semiconductor compound (SiGe/ InAs) and bimaterial oxide (HfO2/SiO2) junctionless tunnel field-effect transistors (JLTFETs). In terms of D.C characteristics, the dual material gate heterogeneous JLTFET (DMG-HJLTFET) outperforms the homogeneous-material Si-JLTFET, with ~ 389 and ~ 3 times greater ION and ION/IOFF, respectively, and ~ 63% lower Vth. At an optimal Ge-mole composition (0.1) of SiGe, the higher output (O/P) is ascribed to the conduction band (C.B) local minima created at the channel, which results in a narrower tunneling barrier width. Furthermore, compared to Si-JLTFET, the DMG-HJLTFET provides 110.5 times greater gm resulting in ~ 1.5 - and 214-times better device efficacy and cut-off frequency (fT), respectively, as well as a ~ 56% drop in the value of parasitic capacitance, promoting it for fast switching applications.

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Acknowledgements

Authors would like to thank the Indian Institute of Technology, Roorkee, and Graphic Era (Deemed to be University) for their support and permission to communicate this research paper.

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Authors and Affiliations

  1. Microelectronics and VLSI Lab, Electronics and Computer Discipline DPT, IIT Roorkee, Roorkee, Uttarakhand, India

    Kaushal Kumar & Subhash Chandra Sharma

  2. Jaypee Institute of Information Technology, Noida, Uttar Pradesh, India

    Ajay Kumar

  3. Graphic Era Deemed to be University, Dehradun, Uttarakhand, India

    Varun Mishra

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  1. Kaushal Kumar
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  2. Ajay Kumar
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Contributions

Kaushal Kumar (first and corresponding author) conceived the research study and wrote the paper.

Ajay Kumar planned the study, reviewed and corrected the manuscript.

Varun Mishra planned the study, reviewed and corrected the manuscript.

Subhash Chandra Sharma, planned the study and preparation of figures, and reviewed and corrected the manuscript.

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Correspondence to Kaushal Kumar.

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Kumar, K., Kumar, A., Mishra, V. et al. Implementation of Band Gap and Gate Oxide Engineering to Improve the Electrical Performance of SiGe/InAs Charged Plasma-Based Junctionless-TFET. Silicon 15, 1303–1313 (2023). https://doi.org/10.1007/s12633-022-02111-w

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