Skip to main content
Log in

Comparative Analysis of Dielectric Engineered Tunnel FET for Biosensing Applications

  • Original Paper
  • Published:
Silicon Aims and scope Submit manuscript

Abstract

Among several types of innovative bio-sensing technologies, label free dielectric modulated field-effect transistor (DM-FET) based biosensors, stand out because of their appealing properties, including ultra-sensitivity detection, mass-production capacity, low-cost manufacturing, and batch testing facility. This work investigates the Dielectric Modulated Tunnel Field Effect Transistor (DM-TFET) biosensor for low power applications and performance characterization. ATLAS TCAD simulator tool from SILVACO is used to simulate and characterise the biosensor. In this work we proposed and compared three different types of double gate (DG) TFET based biosensors, i.e., both side cavity (DG_BSC_TFET), drain side cavity (DG_DSC_TFET) and full both side cavity (DG_FBSC_TFET). The proposed biosensors are differentiated on the basis of the exposed area to trap the biomolecules. In particular, we focused on the sensitivity and ambipolarity of tunnel field-effect sensors. Further, we analysed the effect of biosensor performance on sensing surface properties, including electric field strength, transfer characteristics, Ion/Ioff ratio, and various other related parameters. The critical difficulties of device design and practical limits have been addressed. The simulated results show that the ambipolar current sensitivity of the proposed structure shows comparative better results than other published data, and it is observed that the sensitivity of the DG-FBSC-TFET-based biosensor is twofold more than the DG_BSC_TFET and DG_DSC_TFET. Due to the higher surface to volume ratio in DG_FBSC_TFET, a greater number of biomolecules are immobilised on the surface of the biosensor, which makes it a capable candidate for future low power label free biosensors.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

Data Availability

This is the simulated work and the old papers on the same topic is only the required materials and the simulation performed on the TAD tool.

References

  1. Ajay R, Narang M, Saxena, Gupta M (2014) Analytical modeling of a split-gate dielectric modulated metal-oxide-semiconductor field-effect transistor for application as a biosensor. Proc IEEE Int Caracas Conf Devices, Circuits Syst ICCDCS, pp 1–6. https://doi.org/10.1109/ICDCSyst.2014.6926183

  2. Singh A, Chaudhury S, Chanda M, Sarkar CK (2020) Split gated silicon nanotube FET for biosensing applications. IET Circuits Devices Syst 14(8):1289–1294. https://doi.org/10.1049/iet-cds.2020.0208

    Article  Google Scholar 

  3. Fernandez S (2014) Ultrasensitive biosensor from molybdenite semiconductor outshines graphene. UCSB Curr [Online]. Available: http://www.news.ucsb.edu/2014/014380/ultra-sensitive-biosensor-mos2-semiconductor-outshines-graphenehttps://doi.org/10.1021/nn5009148

  4. Gao XPA, Zheng G, Lieber CM (2010) Subthreshold regime has the optimal sensitivity for nanowire FET biosensors. Nano Lett 10(2):547–552. https://doi.org/10.1021/nl9034219

    Article  CAS  PubMed  PubMed Central  Google Scholar 

  5. Curreli M et al (2008) Real-time, label-free detection of biological entities using nanowire-based FETs. IEEE Trans Nanotechnol 7:651–667. https://doi.org/10.1109/tnano.2008.2006165

    Article  Google Scholar 

  6. Kim C, Jung C, Park HG, Choi Y (2008) Novel dielectric-modulated field-effect transistor for label-free DNA detection. Biochip 2(2):127–134

  7. Goswami R (2017) Gate engineered and bandgap engineered TFETs: simulation, modeling and applications Department of Electronics and Communication. Engineering National Institute of Technology Silchar, p 14

  8. Jokilaakso N (2013) A biotechnology perspective on silicon nanowire FETs for biosensor applications. Ph.D. Diss. KTH - Royal Institute of Technology School of Biotechnology Stockholm

  9. Knopfmacher OS (2011) Oren S. Knopfmacher - Sensing with silicon nanowire field-effect transistors sensing with silicon nanowire field-effect transistors,. Ph.D. Diss. Univ. Basel, Basel, CH

  10. Singh S, Raman A (2018) Gate-all-around charge plasma-based dual material gate-stack nanowire FET for enhanced analog performance. IEEE Trans Electron Devices 65(7):3026–3032. https://doi.org/10.1109/TED.2018.2816898

    Article  CAS  Google Scholar 

  11. Bergveld P (2003) Thirty years of ISFETOLOGY. Sens Actuators B Chem 88(1):1–20. https://doi.org/10.1016/S0925-4005(02)00301-5

    Article  CAS  Google Scholar 

  12. Laser AZ et al (2013) Multi-gate Si nanowire MOSFETs: Fabrication, strain engineering and transport analysis. IEEE Trans Electron Devices 63(3):1689–1699. https://doi.org/10.1017/CBO9781107415324.004

    Article  Google Scholar 

  13. Singh A, Chaudhary S, Sharma SM, Sarkar CK (2020) Improved drive capability of silicon nano tube tunnel FET using halo implantation. Silicon. https://doi.org/10.1007/s12633-019-00350-y

    Article  Google Scholar 

  14. Dewan B, Chaudhary S, Bohra N, Kumari A, Yadav M (2022) Correction to: A TCAD Approach to Analyze the Performance of Dual Gate Dielectric Modulated Vertical Tunnel Field Effect Transistor Based Biosensor (MAPAN, 37, 2, (337–344). https://doi.org/10.1007/s12647-021-00525-2). Mapan - J Metrol Soc India 37(2):345. https://doi.org/10.1007/s12647-022-00545-6

  15. Dewan B, Chaudhary S, Yadav M (2022) A charge plasma based label free biomolecule detector using SiGe-heterojunction double gate tunnel FET. Silicon 14(7):3259–3268. https://doi.org/10.1007/s12633-021-00969-w

    Article  CAS  Google Scholar 

  16. Dewan B, Chaudhary S, Yadav M (2021) Electrically doped SiGe-heterojunction TFET based biosensor considering non-ideal hybridization issues: a simulation study. Appl Phys A Mater Sci Process 127(10):1–9. https://doi.org/10.1007/s00339-021-04933-8

    Article  CAS  Google Scholar 

  17. Ahn JH, Choi SJ, Han JW, Park TJ, Lee SY, Choi YK (2010) Double-gate nanowire field effect transistor for a biosensor. Nano Lett 10(8):2934–2938. https://doi.org/10.1021/nl1010965

    Article  CAS  PubMed  Google Scholar 

  18. Abdi DB, Kumar MJ (2015) Superlattices and Microstructures Dielectric modulated overlapping gate-on-drain tunnel-FET as a label-free biosensor. Superlattices Microstruct 86:198–202. https://doi.org/10.1016/j.spmi.2015.07.052

    Article  CAS  Google Scholar 

  19. Singh A, Shifaw AF, Tekilu D, Chanda M (2021) Silicon nanotube tunnel FET as a label free biosensor. Int J Nanoelectron Mater 14(3):229–236

  20. Singh A, Narang R, Saxena M, Gupta M (2014) Ambipolar behaviour of Tunnel Field Effect Transistor (TFET) as an advantage for biosensing applications. Phys Semicond Devices 171–174. https://doi.org/10.1007/978-3-319-03002-9_43

  21. Boucart K, Ionescu AM (2006) Double Gate Tunnel FET with ultrathin silicon body and high-k gate dielectric. In Proceedings of the European Solid-State Device Research Conference, pp 383–386

  22. Silvaco Inc. (2016) Atlas User’s Manual. Silvaco Inc., no. 408, p 1715, [Online]. Available: https://dynamic.silvaco.com/dynamicweb/jsp/downloads/DownloadManualsAction.do?req=silen-manuals&nm=atlas

  23. Paras N, Chauhan SS, June (2019) Insights into the DC, RF/Analog and linearity performance of vertical tunneling based TFET for low-power applications. Microelectron Eng 216:111043. https://doi.org/10.1016/j.mee.2019.111043

    Article  CAS  Google Scholar 

  24. Reddy NN, Panda DK (2021) Nanowire gate all around-TFET-based biosensor by considering ambipolar transport. Appl Phys A Mater Sci Process 127(9):1–9. https://doi.org/10.1007/s00339-021-04840-y

    Article  CAS  Google Scholar 

  25. Narang R, Saxena M, Gupta M(2014) Ambipolar Behaviour of Tunnel Field Effect Transistor (TFET) as an Advantage for Biosensing Applications, pp 171–172. https://doi.org/10.1007/978-3-319-03002-9

Download references

Acknowledgements

Authors are thankful to Department of Electronics and Communication Engineering, School of Electrical Engineering and Computing, Adama Science and Technology university, Adama, Ethiopia to provide the necessary resources used for the preparation of the manuscript.

Author information

Authors and Affiliations

Authors

Contributions

Solomon is the M.Sc. (PG) student at ASTU, Ethiopia. He has done his PG thesis under the supervision of Avtar Singh and Dereje Tekilu.

Corresponding author

Correspondence to Avtar Singh.

Ethics declarations

This is the new work and submitted to any journal first time. The manuscript is prepared as the ethical standard.

Conflict of Interest

This is the novel work. There is no any type of conflict of interest.

Consent to Participate

Yes

Consent for Publication

Yes.

Additional information

Publisher’s Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Jorga, S.K., Singh, A. & Tekilu, D. Comparative Analysis of Dielectric Engineered Tunnel FET for Biosensing Applications. Silicon 15, 1401–1411 (2023). https://doi.org/10.1007/s12633-022-02107-6

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s12633-022-02107-6

Keywords

Navigation