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Double Gate Double-Channel AlGaN/GaN MOS HEMT and its Applications to LNA with Sub-1 dB Noise Figure

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Abstract

The manuscript proposes a novel double gate double-channel AlGaN/GaN MOS high electron mobility transistor (DG-DC-MOS-HEMT) for the low noise amplifier (LNA) applications. Double-channel structure importance on high-frequency noise and analog/RF performance of AlGaN/GaN HEMT have been explored in this work through TCAD device simulations. The existence of lower channels improves the transconductance (gm), unity gain cut-off frequency (fT), and minimum noise figure (NFmin) of DG-DC-MOS-HEMT compared to DG-MOS-HEMT. The DG-DC-MOS-HEMT with channel length of 220 nm exhibits gm of 0.85mS/um, fT of 137GHz, and NFmin of 0.21 dB. For the first time in this paper, an LNA using DG-DC-MOS-HEMT has been designed for X-Band radar applications. An s2p model is developed for DG-DC-MOS-HEMT and the models are incorporated into the ADS simulator to utilize the proposed device in circuit simulations. Comparing the results of LNA by DG-DC-MOS-HEMT with LNA by DG-MOS-HEMT at f = 10GHz, an increase of 56% and 36%, respectively, in noise figure (NF) and forward voltage gain (S21), was found. This paper gives an opportunity to attain high-performance LNA with the proposed DG-DC-MOS-HEMT.

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References

  1. Jena K, Swain R, Lenka TR (2015) Impact of oxide thickness on gate capacitance–modelling and comparative analysis of GaN-based MOSHEMTs. Pramana 85(6):1221–1232

    Article  CAS  Google Scholar 

  2. Takagi S-I, Toriumi A (1995) Quantitative understanding of inversion-layer capacitance in Si MOSFET’s. IEEE Trans Electron Devices 42(12):2125–2130

    Article  Google Scholar 

  3. Yigletu FM et al (2013) Compact charge-based physical models for current and capacitances in AlGaN/GaN HEMTs. IEEE Trans Electron Devices 60(11):3746–3752

    Article  CAS  Google Scholar 

  4. Mukherjee H, Kar M, Kundu A (2022) Enhancement in analog/RF and power performance of underlapped dual-gate GaN-based MOSHEMTs with quaternary InAlGaN barrier of varying widths. J Electron Mater 51(2):692–703

    Article  CAS  Google Scholar 

  5. Khan AN, Jena KA, Routray S, Chatterjee G (2022) RF/analog and linearity performance evaluation of lattice-matched ultra-thin AlGaN/GaN gate recessed MOSHEMT with silicon substrate. Silicon. https://doi.org/10.1007/s12633-021-01605-3

  6. Zine-eddine T, Zahra H, Zitouni M (2019) Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications. J Sci Adv Mater Devices 4(1):180–187

    Article  Google Scholar 

  7. Hu X et al (2000) Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate. Electron Lett 36(8):753–754

    Article  CAS  Google Scholar 

  8. Wang R et al (2006) Enhancement-mode $ hboxSi_3hboxN_4hbox/AlGaN/GaN $ MISHFETs. IEEE Electron Device Lett 27(10):793–795

  9. Kumar V et al (2003) High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate. Electron Lett 39(24):1758–1760

    Article  CAS  Google Scholar 

  10. Huang W, et al. (2008) Enhancement-mode Gan hybrid Mos-hemts with r on, sp of 20 mω-cm 2. 2008 20th International Symposium on Power Semiconductor Devices and IC’s. IEEE

  11. Lin C-W, et al. (2009) Device performance of AlGaN/GaN MOS-HEMTs using La 2 O 3 high-k oxide gate insulator. 2009 Proceedings of the European Solid State Device Research Conference. IEEE

  12. Lee C-S et al (2014) Composite HfO2/Al2O3-dielectric AlGaAs/InGaAs MOS-HEMTs by using RF sputtering/ozone water oxidation. Superlattice Microst 72:194–203

    Article  CAS  Google Scholar 

  13. Swain R, Jena K, Lenka TR (2016) Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT. Mater Sci Semicond Process 53:66–71

    Article  CAS  Google Scholar 

  14. Hu C-C et al (2011) AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped $\hbox {TiO} _ {2} $ as a Gate Dielectric. IEEE Trans Electron Devices 59(1):121–127

  15. Sandeep V et al (2020) Impact of AlInN Back-barrier over AlGaN/GaN MOS-HEMT with HfO2 dielectric using cubic spline interpolation technique. IEEE Trans Electron Devices 67(9):3558–3563

    Article  CAS  Google Scholar 

  16. Dasgupta S et al (2010) Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by in (Ga) N regrowth. Appl Phys Lett 96(14):143504

    Article  Google Scholar 

  17. Zhang XW, Jia KJ, Wang YG, Feng ZH, Zhao ZP (2013) AlNGaN HEMT T-gate optimal design. In: Applied mechanics and materials, vol 347. Trans Tech Publications Ltd., pp 1790–1792

  18. (2015) ATLAS user manual. Silvaco Int., Santa Clara

  19. Sandeep V, Charles Pravin J (2021) Influence of graded AlGaN sub-channel over the DC and breakdown characteristics of a T-gated AlGaN/GaN/AlInN MOS-HEMT. Superlattice Microst 156:106954

    Article  CAS  Google Scholar 

  20. Vadizadeh M (2021) Digital performance assessment of the dual-material gate GaAs/InAs/Ge junctionless TFET. IEEE Trans Electron Devices 68(4):1986–1991

    Article  CAS  Google Scholar 

  21. Vadizadeh M, Fallahnejad M (2021) Impact of effective mass changes with mole-fraction on the analog/radio frequency benchmarking parameters in junctionless Ga x In 1− x As/GaAs field-effect transistor. Int J Mod Phys B 35(23):2150238

    Article  CAS  Google Scholar 

  22. Vadizadeh M (2018) Characteristics of GaAs/GaSb tunnel field-effect transistors without doping junctions: numerical studies. J Comput Electron 17(2):745–755

    Article  CAS  Google Scholar 

  23. Ambacher O et al (2002) Pyroelectric properties of Al (in) GaN/GaN hetero-and quantum well structures. J Phys Condens Matter 14(13):3399

    Article  CAS  Google Scholar 

  24. Ambacher O et al (1999) Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures. J Appl Phys 85(6):3222–3233

    Article  CAS  Google Scholar 

  25. Panda DK et al (2020) Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise amplifiers: a comparative study. IET Circ Devices Syst 14(7):1018–1025

    Article  Google Scholar 

  26. Bahadori-Jahromi F, Zareian-Jahromi SJ (2018) Highly linear high-frequency low-noise amplifier design at ISM band. Wirel Pers Commun 103(3):2679–2692

    Article  Google Scholar 

  27. Pucel RA, Haus HA, Statz H (1975) Signal and noise properties of gallium arsenide microwave field-effect transistors. In: Advances in electronics and electron physics, vol 38. Academic Press, pp 195–265

  28. Fallahnejad M et al (2020) Impact of channel doping engineering on the high-frequency noise performance of junctionless In0. 3Ga0. 7As/GaAs FET: a numerical simulation study. Phys E: Low-Dimensional Syst Nanostruct 115:113715

    Article  CAS  Google Scholar 

  29. Bajelan F et al (2017) Performance improvement of junctionless field effect transistors using p-GaAs/AlGaAs heterostructure. Superlattice Microst 110:305–312

    Article  CAS  Google Scholar 

  30. Dambrine G et al (1999) High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits. IEEE Trans Electron Devices 46(8):1733–1741

    Article  CAS  Google Scholar 

  31. Chen Y, Ruimin X (2014) Analysis of the RF and noise performance of junctionless MOSFETs using Monte Carlo simulation. Int J Numer Model Electron Netw Devices Fields 27(5–6):822–833

    Article  Google Scholar 

  32. Pospieszalski MW (1989) Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence. IEEE Trans Microw Theory Tech 37(9):1340–1350

    Article  Google Scholar 

  33. Dutta G, Kanaga S, DasGupta N, DasGupta A (2019) AlGaN/GaN HEMT fabrication and challenges. In: Handbook for III-V high electron mobility transistor technologies. CRC Press, pp 133–171

  34. Quay R (2008) Gallium nitride electronics. Springer Science & Business Media

  35. Arthur G, Martin B (1996) Investigation of photoresist-specific optical proximity effect. Microelectron Eng 30(1–4):133–136

    Article  CAS  Google Scholar 

  36. Chan SH, Wong AK, Lam EY (2008) Initialization for robust inverse synthesis of phase-shifting masks in optical projection lithography. Opt Express 16(19):14746–14760

    Article  Google Scholar 

  37. Kuo W-ML et al (2006) A low-power, $ X $-band SiGe HBT low-noise amplifier for near-space radar applications. IEEE Microw Wirel Components Lett 16(9):520–522

  38. Gonzalez G (1997) Microwave transistor amplifiers: analysis and design. Prentice Hall, New Jersey

  39. Liao SY (1987) Microwave circuit analysis and amplifier design. Prentice-Hall, Inc.

  40. Colangeli S et al (2013) GaN-based robust low-noise amplifiers. IEEE Trans Electron Devices 60(10):3238–3248

    Article  CAS  Google Scholar 

  41. Çaışkan C et al (2018) Sub-1-dB and wideband SiGe BiCMOS low-noise amplifiers for X -band applications. IEEE Trans Circ Syst I: Regular Papers 66(4):1419–1430

    Google Scholar 

  42. Liu L, Alt AR, Benedickter H, Bolognesi CR (2012) InP-HEMT X-band low-noise amplifier with ultralow 0.6-mW power consumption. IEEE Electron Device Lett 33(2):209–211

    Article  Google Scholar 

  43. Andrei C et al. (2012) Highly linear X-band GaN-based low-noise amplifier. 2012 International Symposium on Signals, Systems, and Electronics (ISSSE). IEEE

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Authors and Affiliations

  1. Department of Electrical Engineering, Abhar Branch, Islamic Azad University, Abhar, Iran

    Mahdi Vadizadeh & Farshad Bajelan

  2. Department of Electrical Engineering, Central Tehran Branch, Islamic Azad University, Tehran, Iran

    Mohammad Fallahnejad & Reyhaneh Ejlali

  3. Department of Electrical Engineering, Kermanshah University of Technology, Kermanshah, Iran

    Maryam Shaveisi

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  1. Mahdi Vadizadeh
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  2. Mohammad Fallahnejad
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  5. Farshad Bajelan
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Vadizadeh, M., Fallahnejad, M., Shaveisi, M. et al. Double Gate Double-Channel AlGaN/GaN MOS HEMT and its Applications to LNA with Sub-1 dB Noise Figure. Silicon 15, 1093–1103 (2023). https://doi.org/10.1007/s12633-022-02083-x

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