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Impact of Dual Material Gate Design and Retrograde Channel Doping on β-Ga2O3 MOSFET for High Power and RF Applications

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Abstract

In the present work, dual material gate design and retrograde doping has been implemented on lateral β-Ga2O3 MOSFET with the aim to improve Power Figure of Merit (PFoM) as well as to achieve superior device performance for high power and Radio Frequency (RF) applications. Various analog metrics such as drain current (Id), transconductance (gm) and output conductance (gd) etc., have been analyzed using TCAD Silvaco and breakdown voltage has also been extracted to examine the efficacy of device for aforementioned applications. Furthermore, in order to assess the effectiveness of the proposed device design, the characteristics have also been compared with those obtained for conventional β-Ga2O3 MOSFET. In addition, RF parameters such as intrinsic capacitances, cut-off frequency, Transconductance Frequency Product (TFP) and Gain Bandwidth Product (GBP) etc., have also been evaluated and compared for both devices. It is demonstrated that the proposed device exhibits tremendous improvement in breakdown voltage along with remarkably high power figure of merit.

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Acknowledgements

The work of P. Goyal was supported by University Grants Commission, Government of India under Grant (200510172483). The authors also acknowledge Faculty Programme Grant – IoE.

Funding

The work of P. Goyal was supported by University Grants Commission, Government of India under Grant (200510172483). The authors also acknowledge Faculty Programme Grant – IoE (Ref. No./ IoE/2021/12/FRP.

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Author notes

  1. Priyanshi Goyal - Conceptualisation, simulations, original draft, editing.

    Harsupreet Kaur – Conceptualisation, technical inputs towards simulation, review and editing.

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  1. Department of Electronic Science, University of Delhi South Campus, New Delhi, India

    Priyanshi Goyal & Harsupreet Kaur

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  1. Priyanshi Goyal
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Correspondence to Harsupreet Kaur.

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Goyal, P., Kaur, H. Impact of Dual Material Gate Design and Retrograde Channel Doping on β-Ga2O3 MOSFET for High Power and RF Applications. Silicon 15, 1597–1608 (2023). https://doi.org/10.1007/s12633-022-02079-7

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  • DOI: https://doi.org/10.1007/s12633-022-02079-7

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