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Investigation of Single Event Transients on RingFET using 3D TCAD Simulations

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Abstract

In this work, the effect of heavy ion radiation on ringFET structures with gate lengths of 32 nm and 20 nm is explored using 3D TCAD simulations. The sensitive position of the device is examined by the single event transient (SET) effect on interaction of an ionizing particle, such as a heavy ion, with different Linear Energy Transfer (LET) values. It is found that the channel region closer to the drain is found to be the most sensitive region and the centre of the source is found to be the least sensitive region for normal incidence. Also the ringFET structure with shorter gate length (20 nm) is found to have lower Qcollect when compared with larger gate length (32 nm).

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Acknowledgements

The authors are thankful to Sri Sivasubramaniya Nadar College of Engineering, Chennai for their cooperation and support during this research work.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Sri Sivasubramaniya Nadar College of Engineering, Kalavakkam, Chennai, 603110, India

    M. Ramya & K. K. Nagarajan

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  1. M. Ramya
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  2. K. K. Nagarajan
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Contributions

All authors contributed to the study conception, design and simulation analysis. All authors read and approved the final manuscript. Supervision: Dr. K. K. Nagarajan.

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Correspondence to M. Ramya.

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Authors’ Information

Ms. M. Ramya – Working as Research Scholar under the guidance of Dr. K. K. Nagarajan in Department of Electronics and Communication Engineering, SSN College of Engineering, Kalavakkam, Chennai.

Dr. K.K. Nagarajan – Associate Professor in Department of Electronics and Communication Engineering, SSN College of Engineering, Kalavakkam, Chennai.

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Ramya, M., Nagarajan, K.K. Investigation of Single Event Transients on RingFET using 3D TCAD Simulations. Silicon 15, 875–886 (2023). https://doi.org/10.1007/s12633-022-02055-1

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