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Effect of Dual Metal on RF/Analog and Linearity Performance of Double Gate Ferroelectric Si-doped-HfO2 GaN MOSHEMT

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Abstract

In this work, the authors have demonstrated and differentiated between various analog/RF and linearity performances of a lattice-matched normally off dual-gate ferroelectric metal oxide semiconductor-high electron mobility transistor (DG Fe-MOSHEMT) and dual gate dual metal ferroelectric metal oxide semiconductor-high electron mobility transistor (DGDM Fe-MOSHEMT) with physical modeling based Technology Computer-Aided Design (TCAD) simulation. The strong polarization effects of ferroelectric material shift the threshold voltage of the proposed device towards positive side and hence operates the device in normally-off mode. The insertion of dual metal inhibits the conventional trapping effect in MOSHEMT with improved carrier mobility, reducing channel resistance. The DC/ RF performance of the DGDM Fe-MOSHEMT, such as drain current (Id), transconductance (gm) improves compared to the DG Fe-MOSHEMT device. The linearity parameters of dual gate structure with double metal are analyzed, giving better linearity performance such as VIP2, VIP3, input third-order intercept point (IIP3), and third-order intermodulation (IMD3) with high cutoff frequencies compared to conventional structures. The DGDM Fe-MOSHEMT device shows better RF performance, useful for high-frequency applications. The resulting high electric field shows tremendous potential to operate the device in a high potential regime.

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Authors and Affiliations

  1. School of Electronics Engineering, KIIT (Deemed to be University), Bhubaneswar, Odisha, 751024, India

    S. N. Mishra

  2. Department of ECE, The LNM Institute of Information Technology, Rajasthan, 302031, Jaipur, India

    Abdul Naim Khan & K. Jena

  3. Department of Electronics and Communication Engineering, SRM Institute of Science and Technology, 603203, Chennai, Tamil Nadu, India

    S. Routray

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  1. S. N. Mishra
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  2. Abdul Naim Khan
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  3. S. Routray
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  4. K. Jena
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Correspondence to K. Jena.

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Mishra, S.N., Khan, A.N., Routray, S. et al. Effect of Dual Metal on RF/Analog and Linearity Performance of Double Gate Ferroelectric Si-doped-HfO2 GaN MOSHEMT. Silicon 15, 805–812 (2023). https://doi.org/10.1007/s12633-022-02045-3

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  • DOI: https://doi.org/10.1007/s12633-022-02045-3

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