Abstract
To determine the impact of pure and (PVC:SnS) interlayers on the electrophysical features of Schottky barrier diodes (SBDs), Au/n-Si, Au/PVC/n-Si, and Au/(PVC: SnS)/n-Si structures are created on the same n-Si wafer. The average crystalline size, surface-morphology, purity-characterization, and optical features of the prepared SnS-nanostructure are studied by different common techniques. Basic electrical-parameters of these structures are calculated from the I-V data. The energy-dependent distribution of surface-states (Nss) and the current-conduction-mechanisms (CCMs) in these diodes were extracted. The use of PVC and SnS-doped PVC interfacial polymer layers leads to improving the performance of SBDs by increasing the n, Rs, Nss, I0 and an increase in Rsh, Barrier Height (BH). The dielectric-constant (\({\epsilon }^{{\prime }}\))/loss (\({\epsilon }^{{\prime }{\prime }}\)), and ac electrical-conductivity \({\sigma }_{ac}\) of them are investigated in wide-range frequency (100 Hz-1 MHz) by using capacitance/conductance-frequency (C/G-f) measurements and the origin of observed negative capacitance/dielectric at low-frequencies were discussed in details.
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Acknowledgements
This study was supported by Gazi University Scientific Research Project. (Project Number: GU-BAP.05/2019-26).
Funding
This study was supported by Gazi University Scientific Research Project. (Project Number: GU-BAP.05/2019-26).
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The author contribution of this article contribute is as follows: Ali Barkhordari, Experiments, Data analyses and graphs, writing; Şemsettin Altındal, Writing, editing and interpretation of electrical properties; Gholamreza Pirgholi-Givi, Experiments, Analyses of the samples, Discussion; Hamid Reza Mashayekhi, Writing, editing and interpretation of electrical properties; Süleyman Özçelik, Discussion, Writing and editing; Yashar Azizian-Kalandaragh, Idea, experimental section, editing and discussion.
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Barkhordari, A., Altındal, Ş., Pirgholi-Givi, G. et al. The Influence of PVC and (PVC:SnS) Interfacial Polymer Layers on the Electric and Dielectric Properties of Au/n-Si Structure. Silicon 15, 855–865 (2023). https://doi.org/10.1007/s12633-022-02044-4
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DOI: https://doi.org/10.1007/s12633-022-02044-4