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Design and Analysis of Si1-x-yGeySnx-Si1-xGex Alloy Based Solar Cell Emphasizing on Ge Composition 15%

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Abstract

The application of group IV materials in optoelectronic, electronic and photonic devices is one of the active research fields for Si Photonics. In this paper, we present the design and implementation of direct bandgap Si1 − x−yGeySnx-Si1 − xGex alloy based solar cell emphasizing on thickness reduction and conversion efficiency improvement with Ge composition of 15% and obtained the performance parameters of the structure, including short circuit current density, open circuit voltage, efficiency, fill factors etc. by using ATLAS TCAD simulator. The estimated values and its performance of the proposed structure is compared with the theoretical values of already reported Si1 − xGex based solar cells in the literature. Hence, comparatively better results are obtained. The high efficiency, smaller value of substrate thickness and 15% Ge composition makes the proposed structure attractive for various applications in solar cell industry.

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Acknowledgements

The authors would like to express their gratitude to the Electronics and Communication Department at NIT Delhi for providing research facilities and assistance in carrying out this work.

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Authors and Affiliations

  1. Department of Mechatronics Engineering, Chandigarh University, Mohali, Punjab, India

    Jaspinder Kaur

  2. Department of Electronics and Communication Engineering, National Institute of Technology, Delhi, India

    Rikmantra Basu

  3. Department of Computer Science and Engineering, Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, India

    Ajay Kumar Sharma

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  1. Jaspinder Kaur
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  2. Rikmantra Basu
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  3. Ajay Kumar Sharma
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Kaur, J., Basu, R. & Sharma, A.K. Design and Analysis of Si1-x-yGeySnx-Si1-xGex Alloy Based Solar Cell Emphasizing on Ge Composition 15%. Silicon 15, 397–404 (2023). https://doi.org/10.1007/s12633-022-02025-7

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